The transmittance, conductivity, and flexibility are the crucial properties for the development of next-generation flexible electrodes. Achieving a good trade-off between transmittance and conductivity of flexible electrodes has been a challenge because the two properties are inversely proportional. Herein, we reveal a good trade-off between transmittance and conductivity of gold nanomesh (AuNM) can be achieved through appropriately increasing the AuNM thickness no more than 40 nm, the mean free path of electrons in Au metal. The further flexibility investigation indicates that the AuNM electrodes with mesh structure show higher tolerance than the Au bulk film, and the AuNM electrodes with smaller inter-aperture wire width can accommodate more tensile strains than a counterpart with bigger inter-aperture wire width. The simulated results based on finite element analysis (FEA) show good agreement with experimental results, which indicates the fabrication method of versatile nanosphere lithography (NSL) is reliable. These results established a promising approach toward next-generation large-scale flexible transparent AuNM electrodes for flexible electronics.

A controllable strategy to fabricate the polymeric nanowires with high throughput and low cost is developed by using the thermal nanoimprint lithography (NIL) technique and self-assembled anodic aluminum oxide (AAO) template. The length of polymeric nanowires can be controlled by adjusting the duration of thermal NIL. A fill mechanism of thermoplastic intermediate polymer stamp (IPS) polymer pressed into the AAO nanopores is closely studied. The as-prepared IPS polymeric nanowire-based Surface-Enhanced Raman Scattering (SERS)-active substrate exhibits a remarkable reproducibility. The effective adsorption of the R6G as probe molecule near to hotspots generated at 3D vertically aligned polymeric nanowire SERS active substrates shows extraordinary enhancement of Raman signal with an enhancement factor (EF) of 10⁵–10⁶. The present strategy is of great guiding significance to broaden the use of thermal NIL technique and AAO template for the fabrication of other nanomaterials, especially for the flexible and transparent polymer-based nanomaterials.

GaN is one of the most promising materials for high PEC efficiency to produce clean, renewable hydrogen in an ecofriendly manner (Ebaid et al., 2015; Kamimura et al., 2017; Yang et al., 2018; Ohkawa et al., 2013). Trough assays of nanoporous gallium nitride (GaN) photoelectrode, we recently demonstrated an improved PEC efficiency and photocurrent density of nanoporous GaN photoelectrode by 470% times with respect to planar counterpart (Li et al., 2019). Here, we report original data acquired under UV-visible spectrometer, X-ray diffraction (XRD), room temperature PL measurements and PEC measurements, based on the characterization of different sapphire substrate, different GaN samples and different GaN photoelectrodes. The optical properties and photoelectrochemical properties of the corresponding samples and possible mechanisms are presented, which is freely available (Li et al., 2019). The data can be valuable for researchers interested in photoelectrochemical water splitting, as well as to researchers developing fabrication of nanoporous photoelectrode. For more insight please see the research article "A nanoporous GaN photoelectrode on patterned sapphire substrates for high-efficiency photoelectrochemical water splitting", https://doi.org/10.1016/j.jallcom.2019.06.234.