Reliability of nonvolatile resistive switching devices is the key point for practical applications of next-generation nonvolatile memories. Nowadays, nanostructured organic/inorganic heterojunction composites have gained wide attention due to their application potential in terms of large scalability and low-cost fabrication technique. In this study, the interaction between polyvinyl alcohol (PVA) and two-dimensional material molybdenum disulfide (MoS₂) with different mixing ratios was investigated. The result confirms that the optimal ratio of PVA:MoS₂ is 4:1, which presents an excellent resistive switching behavior. Moreover, we propose a resistive switching model of Ag/ZnO/PVA:MoS₂/ITO bilayer structure, which inserts the ZnO as the protective layer between the electrode and the composite film. Compared with the device without ZnO layer structure, the resistive switching performance of Ag/ZnO/PVA:MoS₂/ITO was improved greatly. Furthermore, a large resistive memory window up to 10⁴ was observed in the Ag/ZnO/PVA:MoS₂/ITO device, which enhanced at least three orders of magnitude more than the Ag/PVA:MoS₂/ITO device. The proposed nanostructured Ag/ZnO/PVA:MoS₂/ITO device has shown great application potential for the nonvolatile multilevel data storage memory.

In this paper, the effect of nitrogen annealing on the resistive switching characteristics of the rutile TiO₂ nanowire-based W/TiO₂/FTO memory device is analyzed. The W/TiO₂/FTO memory device exhibits a nonvolatile bipolar resistive switching behavior with a high resistance ratio (R_HRS/R_LRS) of about two orders of magnitude. The conduction behaviors of the W/TiO₂/FTO memory device are attributed to the Ohmic conduction mechanism and the Schottky emission in the low resistance state and the high resistance state, respectively. Furthermore, the R_HRS/R_LRS of the W/TiO₂/FTO memory device is obviously increased from about two orders of magnitude to three orders of magnitude after the rapid nitrogen annealing treatment. In addition, the change in the W/TiO₂ Schottky barrier depletion layer thickness and barrier height modified by the oxygen vacancies at the W/TiO₂ interface is suggested to be responsible for the resistive switching characteristics of the W/TiO₂/FTO memory device. This work demonstrates the potential applications of the rutile TiO₂ nanowire-based W/TiO₂/FTO memory device for high-density data storage in nonvolatile memory devices.

Perovskite solar cells (PSCs) have emerged as promising candidates for next-generation photovoltaic technology due to their remarkable power-conversion efficiencies (PCEs). Since their introduction, the PCE of PSCs has advanced from 3.8% to over 26%. Nonetheless, challenges pertaining to stability and reliability continue to impede their commercial viability. Recent progress in interface engineering and materials science has underscored the potential of two-dimensional (2D) materials, particularly MXenes, in mitigating these challenges. MXenes represent a class of two-dimensional materials with significant potential for application in PSCs, attributed to their exceptional electrical conductivity, high carrier mobility, remarkable optical transparency, chemical stability, and tunable surface chemical properties. When employed as electron transport layers, MXenes enhance charge transfer and extraction efficiency, leading to substantial improvements in PCEs. Furthermore, their integration into hole transport layers and use as interfacial modifiers contribute to the mitigation of degradation pathways, thereby enhancing device longevity. The unique structural and electronic characteristics of MXenes facilitate their application as transparent electrodes, presenting opportunities for cost reduction and improved optical properties. This review provides a comprehensive overview of the current advancements in MXene-based PSCs, emphasizing significant accomplishments and exploring future research directions aimed at enhancing the efficiency and stability of these devices.

Traditional graphite anode material typically shows a low theoretical capacity and easy lithium decomposition. Molybdenum disulfide is one of the promising anode materials for advanced lithium-ion batteries, which possess low cost, unique two-dimensional layered structure, and high theoretical capacity. However, the low reversible capacity and the cycling-capacity retention rate induced by its poor conductivity and volume expansion during cycling blocks further application. In this paper, a collaborative control strategy of monodisperse MoS₂/graphite composites was utilized and studied in detail. MoS₂/graphite nanocomposites with different ratios (MoS₂:graphite = 20%:80%, 40%:60%, 60%:40%, and 80%:20%) were prepared by mechanical ball-milling and low-temperature annealing. The graphite sheets were uniformly dispersed between the MoS₂ sheets by the ball-milling process, which effectively reduced the agglomeration of MoS₂ and simultaneously improved the electrical conductivity of the composite. It was found that the capacity of MoS₂/graphite composites kept increasing along with the increasing percentage of MoS₂ and possessed the highest initial discharge capacity (832.70 mAh/g) when MoS₂:graphite = 80%:20%. This facile strategy is easy to implement, is low-cost, and is cosmically produced, which is suitable for the development and manufacture of advance lithium-ion batteries.