In this work, we report on the deposition of microcrystalline silicon (µc-Si:H) films produced from silane (SiH₄), hydrogen (H₂), and argon (Ar) mixtures using the plasma-enhanced chemical vapor deposition (PECVD) technique at 200 °C. Particularly, we studied the effect of RF power on the crystalline fraction (X_C) of the deposited films, and we have correlated the X_C with their optical, electrical, and structural characteristics. Different types of characterization were performed in the µc-Si:H film series. We used several techniques, such as Raman scattering spectroscopy, Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM), among others. Our results show that RF power had a strong effect on the X_C of the films, and there is an optimal value for producing films with the largest X_C.

In the last few years, Thin Film Transistors (TFTs) based on materials such as amorphous Indium–Gallium–Zinc Oxide (a-IGZO) have gained interest in large-area and low-cost electronics due to their high carrier mobility, high on/off current ratio, low off-state current, and steep subthreshold slope. These characteristics make IGZO TFTs suitable for radio-frequency identification (RFID) tags, analog-to-digital converters (ADCs), logic circuits, sensors, and analog components, including operational amplifiers (OPAMPs). This work presents the implementation and characterization of an OPAMP based on n-type a-IGZO TFTs fabricated on glass substrate. Two previously reported design strategies were integrated: a positive feedback network to increase the output impedance and a topology to enhance the transconductance of the driver transistors, both in the differential input stage. A gain of 26 dB, a bandwidth of 2.4 kHz, a gain–bandwidth product (GBWP) of 48 kHz, and a phase margin of 64° were obtained, which confirms the reliability of the design and the fabrication process.

Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) have emerged as promising candidates for next-generation large-area and low-power electronics due to their high mobility, low leakage current, and compatibility with low-temperature fabrication on flexible or transparent substrates. In this work, we report the fabrication of bottom-gate a-IGZO NMOS TFTs using HfO₂ as high-k gate dielectric and Mo top contacts. The devices were electrically characterized through capacitance–voltage (C–V) and current–voltage (I–V) measurements, from which key parameters were extracted. Based on these transistors, we designed, fabricated, and characterized inverters employing four different load configurations: resistive, diode, depletion, and pseudo-CMOS. A comparative analysis was performed in terms of voltage transfer characteristics (VTCs), gain, and noise margins, highlighting that depletion-load inverters offer the highest gain and robust noise margins. Finally, a two-channel multiplexer was designed and fabricated. The multiplexer was characterized under both square and sinusoidal input signals up to 1 kHz, demonstrating correct channel selection and robust switching behavior. These results confirm the potential of a-IGZO TFT-based circuits as building blocks for low-power and high-reliability digital and mixed-signal electronics.