Andrey Guskov

Mr. Andrey Guskov

MIREA - Russian Technological University, Moscow, Moskva, Russia
orcid

Research Focus & Metrics

Academic Career Length

6Years (2021-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

View All Publications
29 May 2022 in Nanomaterials
Verified
Journal Article
Open access
PDF file
AGAndrey Guskov
Andrey Guskov
SLSergey Lavrov
Sergey Lavrov
RGRinat Galiev
Rinat Galiev
In this work we show the possibility of imparting polarization-sensitive properties to two-dimensional films of graphene-like semiconductors, using WSe2 as an example, by the application of ordered silver triangular nanoprisms. In addition, such nanoprisms made it possible to increase the optical sensitivity of optical detectors created on two-dimensional films by a factor of five due to surface plasmon resonance. The peculiarities of the surface plasmon resonance were shown by theoretical modeling, and the optimal conditions of its occurrence were determined. This article demonstrates an effective approach to creating spectrally selective, polarization-sensitive detectors based on two-dimensional graphene-like semiconductors.

23 June 2021 in Applied Physics Express
Verified
Journal Article
Closed access
AGAndrey Guskov
Andrey Guskov
AAArtur Avdizhiyan
Artur Avdizhiyan
SLSergey Lavrov
Sergey Lavrov
RGRinat Galiev
Rinat Galiev
AGAnastasia Gorbatova
Anastasia Gorbatova
EMElena Mishina
Elena Mishina

1 May 2024 in Optical Materials
Verified
Journal Article
Closed access
MSMikhail A. Stepanov
Mikhail A. Stepanov
AGAndrey Guskov
Andrey Guskov
RGRinat Galiev
Rinat Galiev
DADaniil A. Abdullaev
Daniil A. Abdullaev
ESEvgeniy S. Shahurin
Evgeniy S. Shahurin
EMElena Mishina
Elena Mishina

5 August 2024 in Russian Technological Journal
Verified
Journal Article
Open access
PDF file
AGAndrey Guskov
Andrey Guskov
NBNikita Bezvikonnyy
Nikita Bezvikonnyy
SLSergey Lavrov
Sergey Lavrov
Objectives. The optical properties of two-dimensional semiconductor materials, specifically monolayered transition metal dichalcogenides, present new horizons in the field of nano- and optoelectronics. However, their practical application is hindered by the issue of low light absorption. When working with such thin structures, it is essential to consider numerous complex factors, such as resonance and plasmonic effects which can influence absorption efficiency. The aim of this study is the optimization of light absorption in a two-dimensional semiconductor in the Kretschmann configuration for future use in optoelectronic devices, considering the aforementioned phenomena. Methods. A numerical modeling method was applied using the finite element method for solving Maxwell’s equations. A parametric analysis was conducted focusing on three parameters: angle of light incidence, metallic layer thickness, and semiconductor layer thickness.Results. Parameters were identified at which the maximum area of absorption peak was observed, including the metallic layer thickness and angle of light incidence. Based on the resulting graphs, optimal parameters were determined, in order to achieve the highest absorption percentages in the two-dimensional semiconductor film.Conclusions. Based on numerical studies, it can be asserted that the optimal parameters for maximum absorption in the monolayer film are: Ag thickness <20 nm and angle of light incidence between 55° and 85°. The maximum absorption in the two-dimensional film was found only to account for a portion of the total absorption of the entire structure. Thus, a customized approach to parameter selection is necessary, in order to achieve maximum efficiency in certain optoelectronic applications.

5 February 2026 in Russian Technological Journal
Verified
Journal Article
Closed access
EZE. I. Zhemerov
E. I. Zhemerov
AGAndrey Guskov
Andrey Guskov
EBE. A. Bulavintseva
E. A. Bulavintseva
DSDmitry Seregin
Dmitry Seregin
SLSergey Lavrov
Sergey Lavrov
Objectives . The aim of this study is to develop and demonstrate an effective method for obtaining large-area, high-quality monolayers of molybdenum disulfide (MoS 2 ) on the surface of ferroelectric lead zirconate titanate (PZT) films which exhibit pronounced granularity and texturing. Conventional mechanical exfoliation techniques are inefficient for transferring two-dimensional materials onto nonplanar surfaces. This is due to local height variations and substrate granularity which hinder the formation of continuous monolayers and high-defect-density transferred structures. A particular challenge is the transfer onto functional substrates with surface topography characterized by heterogeneities ranging from tens of nanometers to micrometers. Methods . A gold-assisted exfoliation (GAE) method was employed, including: magnetron sputtering of a 50 nm gold film; mechanical delamination of monolayers using thermally cleavable tape; and subsequent gold etching. The characterization was performed using X-ray diffraction, optical confocal microscopy, atomic force microscopy, and second harmonic generation techniques. The efficiency of the transfer process was compared for Si/SiO 2 and PZT substrates. Results . MoS 2 crystallites with areas up to 3000 µm 2 were obtained on PZT and over 65000 µm 2 on standard Si/SiO 2 substrates, both of which exhibit minimal defect densities. Conventional mechanical exfoliation is shown to be unable to ensure transfer onto textured surfaces, whereas the GAE method preserves the monolayer character of the transferred crystallites even on nonplanar substrates. Conclusions . This work demonstrates for the first time the possibility of obtaining large-area, high-quality MoS 2 monolayers on substrates with pronounced grainy and textured structures, such as ferroelectric PZT films, using the gold-assisted exfoliation method. The work also shows that gold-assisted exfoliation is an effective technique for fabricating extended two-dimensional films with controlled morphological and structural properties, including on substrates previously considered unsuitable for such applications.

22 September 2025 in Optical Materials
Verified
Journal Article
Closed access
NMNikolai V. Mitetelo
Nikolai V. Mitetelo
MSMikhail A. Stepanov
Mikhail A. Stepanov
AGAndrey Guskov
Andrey Guskov
SLSergey Lavrov
Sergey Lavrov
APAlexander P. Pyatakov
Alexander P. Pyatakov
EMElena D. Mishina
Elena D. Mishina