Certain imaging performance metrics are examined for a state-of-the-art 20 μm pixel pitch CMOS sensor (RadEye HR), coupled to a Gd₂O₂S:Tb scintillator screen. The signal transfer property (STP), the modulation transfer function (MTF), the normalized noise power spectrum (NNPS) and the detective quantum efficiency (DQE) were estimated according to the IEC 62220-1-1:2015 standard. The detector exhibits excellent linearity (coefficient of determination of the STP linear regression fit, R² was 0.9978), while its DQE peaks at 33% and reaches 10% at a spatial frequency of 3 cycles/mm, for the measured with a Piranha RTI dosimeter (coefficient of variation CV = 0.03%) exposure value of 28.1 μGy DAK (detector Air Kerma). The resolution capabilities of the X-ray detector under investigation were compared to other commercial CMOS sensors, and were found in every case higher, except from the previous RadEye HR model (CMOS—Gd₂O₂S:Tb screen pair with 22.5 μm pixel pitch) version which had slightly better MTF. The present digital imager is designed for industrial inspection applications, nonetheless its applicability to medical imaging, as well as dual-energy is considered and certain approaches are discussed in this respect.

In this study, the light output of a zinc selenide activated with tellurium (ZnSe: Te) single crystal was measured for X-ray radiography applications. A cubic crystal (10 × 10 × 10 mm) was irradiated using X-rays with tube voltages from 50 to 130 kV. The resulting energy absorption efficiency, detective quantum efficiency, and absolute luminescence efficiency were compared to published data for equally sized GSO: Ce (gadolinium orthosilicate) and BGO (bismuth germanium oxide) crystals. The emitted light was examined to estimate the spectral compatibility with widely used optical sensors. Energy absorption efficiency and detective quantum efficiency of ZnSe: Te and BGO were found to be similar, within the X-ray energies in question. Light output of all three crystals showed a tendency to increase with increasing X-ray tube voltage, but ZnSe: Te stood at least 2 EU higher than the others. ZnSe: Te can be coupled effectively with certain complementary metal–oxide–semiconductors (CMOS), photocathodes, and charge-coupled-devices (CCD), as the effective luminescence efficiency results assert. These properties render the material suitable for various imaging applications, dual-energy arrays included.