Over the past few decades, the application of new novel materials in energy storage system has seen excellent development. We report a novel MnCo₂O₄/NiO nanostructure prepared by a simplistic chemical bath deposition method and employed it as a binder free electrode in the supercapacitor. The synergistic attraction from a high density of active sites, better transportation of ion diffusion and super-most electrical transportation, which deliver boost electrochemical activities. X-ray diffraction, field-emission scanning electron microscopy, and X-ray photoelectron spectroscopy have been used to investigate the crystallinity, morphology, and elemental composition of the as-synthesized precursors, respectively. Cyclic voltammetry, galvanostatic charge/discharge, and electron impedance spectroscopy have been employed to investigate the electrochemical properties. The unique nanoparticle structures delivered additional well-organized pathways for the swift mobility of electrons and ions. The as-prepared binder-free MnCo₂O₄/NiO nanocomposite electrode has a high specific capacity of 453.3 C g⁻¹ at 1 Ag⁻¹, and an excellent cycling reliability of 91.89 percent even after 4000 cycles, which are significantly higher than bare MnCo₂O₄ and NiO electrodes. Finally, these results disclose that the as-fabricated MnCo₂O₄/NiO electrode could be a favored-like electrode material holds substantial potential and supreme option for efficient supercapacitor and their energy storage-related applications.

Wide band gap semiconductor materials are extending significant applications in electronics and optoelectronics industry. They are showing continued advancement in ultraviolet to infrared LEDs and laser diodes. Likewise the band gap tunability of ZnS with intentional impurities such as Mg and Mn are found useful for optoelectronic devices. Information from literature indicates slight blue shift in the band gap energy of ZnS by Mg doping but nevertheless, we report a reasonable red shift (3.48 eV/356 nm to 2.58 eV/480 nm) in ZnS band gap energy in Mg-ZnS structure. Theoretical model based on first principle theory using local density approximation revealed consistent results on Mg-ZnS structure. Similarly, structural, morphological, optical and electrical properties of the as grown Mg-ZnS were studied by XRD, SEM, FTIR, EDS, UV-Vis Spectrophotometer and Hall measurement techniques.

In this study we report thermal evaporation technique as a simple method for the growth of 4H silicon carbide on p-type silicon substrate. A mixture of Si and C₆₀ powder of high purity (99.99%) was evaporated from molybdenum boat. The as grown film was characterized by XRD, FTIR, UV-Vis Spectrophotometer and Hall Measurements. The XRD pattern displayed four peaks at 2Θ angles 28.55⁰, 32.70⁰, 36.10⁰ and 58.90⁰ related to Si (1 1 1), 4H-SiC (1 0 0), 4H-SiC (1 1 1) and 4H-SiC (2 2 2), respectively. FTIR, UV-Vis spectrophotometer and electrical properties further strengthened the 4H-SiC growth.