Due to the low temperature fabrication process and reduced hysteresis effect, inverted p-i-n structured perovskite solar cells (PSCs) with the PEDOT:PSS as the hole transporting layer and PCBM as the electron transporting layer have attracted considerable attention. However, the energy barrier at the interface between the PCBM layer and the metal electrode, which is due to an energy level mismatch, limits the electron extraction ability. In this work, an inorganic aluminum-doped zinc oxide (AZO) interlayer is inserted between the PCBM layer and the metal electrode so that electrons can be collected efficiently by the electrode. It is shown that with the help of the PCBM/AZO bilayer, the power conversion efficiency of PSCs is significantly improved, with negligible hysteresis and improved device stability. The UPS measurement shows that the AZO interlayer can effectively decrease the energy offset between PCBM and the metal electrode. The steady state photoluminescence, time-resolved photoluminescence, transient photocurrent, and transient photovoltage measurements show that the PSCs with the AZO interlayer have a longer radiative carrier recombination lifetime and more efficient charge extraction efficiency. Moreover, the introduction of the AZO interlayer could protect the underlying perovskite, and thus, greatly improve device stability.

Indium thin oxide (ITO)-free planar perovskite solar cells (PSCs) were fabricated at a low temperature (150 °C) in this work based on the transparent electrode of photolithography processed nickel/gold (Ni/Au) mesh and the high conductivity polymer, PH1000. Ultrathin Au was introduced to increase the conductivity of metal mesh, and the optimal hexagonal Ni (30 nm)/Au (10 nm) mesh (line width of 5 μm) shows a transmittance close to 80% in the visible light region and a sheet resistance lower than 16.9 Ω/sq. The conductive polymer PH1000 not only smooths the raised surface of the metal mesh but also enhances the charge collection ability of metal mesh. The fabricated PSCs have the typical planar structure (glass/Ni-Au mesh/PH1000/PEDOT:PSS/MA_yFA_1−yPbI_xCl_3−x/PCBM/BCP/Ag) and the champion PSC (0.09 cm²) obtains a power conversion efficiency (PCE) of 13.88%, negligible current hysteresis, steady current density and PCE outputs, and good process repeatability. Its photovoltaic performance and stability are comparable to the reference PSC based on the ITO electrodes (PCE = 15.70%), which demonstrates that the Ni/Au mesh transparent electrodes are a promising ITO alternative to fabricate efficient PSCs. The relatively lower performance of Ni/Au based PSC results from the relatively slower charge extraction and stronger charge recombination than the ITO based PSC. Further, we tried to fabricate the large area (1 cm²) device and achieve a PCE over 6% with negligible hysteresis and steady current density and PCE outputs. The improvements of perovskite film quality and interface modification should be an effective approach to further enhance the device performance of Ni/Au based PSCs, and the Ni/Au mesh electrode may find wider applications in PSCs and flexible devices.

Perovskite solar cells (PSCs) based on the 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (spiro-OMeTAD) hole transport layer have exhibited leading device performance. However, the instability caused by this organic function layer is a very important limiting factor to the further development of PSCs. In this work, the spiro-OMeTAD is doped with polymethyl methacrylate (PMMA), which is further used as the hole transport layer to improve the device stability. It is shown that the PMMA can effectively improve the moisture and oxygen resistance of spiro-OMeTAD, which leads to improved device stability by separating the perovskite layer from moisture and oxygen. The device efficiency can maintain 77% of the original value for PSCs with the PMMA-doped spiro-OMeTAD hole transport layer, under a natural air environment (RH = 40%) for more than 80 days. The results show that the moisture- and oxygen-resistant PMMA:spiro-OMeTAD hole transport layer is effective at improving the device performance.