Habiba HAFDALLAH
OUSLIMANI Senior Member IEEE. She is born in TEBESSA,
Algeria. She received the Diploma of Higher Education degree in physics from
the University of Science and Technology Houari Boumediene (USTHB) Algeria, in
1980, the master’s degree, Ph.D degree, and the Doctorat d’Etat from the
Institute of Fundamental Electronics (IEF), Group of “Rapid Circuits and
Quantum Optics (CROQ;) – at the Centre
National de Recherche Scientifique (CNRS) University Paris 11-Orsay, in
1981, 1983, and 1990, respectively. From 1984 to 1990, she was an Assistant
Professor with the Institute of Technology Cachan, University Paris 11-Orsay.
She defends the Doctorat d’Etat diploma (May 1990) on "Study of High-Speed
Physical Phenomena in Field Effect Transistors." Institute Electronic IEF
Paris 11 Orsay (currently Paris Saclay University). She joined the University
Paris Nanterre in 1990, as an Associate Professor. She worked between 1990 and
2002 on “Ultra-Fast Circuits for High-Speed Communications (> 40 GB/s)”.
Habiba HAFDALLAH
OUSLIMANI Senior Member IEEE. She is born in TEBESSA,
Algeria. She received the Diploma of Higher Education degree in physics from
the University of Science and Technology Houari Boumediene (USTHB) Algeria, in
1980, the master’s degree, Ph.D degree, and the Doctorat d’Etat from the
Institute of Fundamental Electronics (IEF), Group of “Rapid Circuits and
Quantum Optics (CROQ;) – at the Centre
National de Recherche Scientifique (CNRS) University Paris 11-Orsay, in
1981, 1983, and 1990, respectively. From 1984 to 1990, she was an Assistant
Professor with the Institute of Technology Cachan, University Paris 11-Orsay.
She defends the Doctorat d’Etat diploma (May 1990) on "Study of High-Speed
Physical Phenomena in Field Effect Transistors." Institute Electronic IEF
Paris 11 Orsay (currently Paris Saclay University). She joined the University
Paris Nanterre in 1990, as an Associate Professor. She worked between 1990 and
2002 on “Ultra-Fast Circuits for High-Speed Communications (> 40 GB/s)”.