Philippe Knauth

Prof. Philippe Knauth

Aix-Marseille University
orcid

Research Focus & Metrics

Academic Career Length

41Years (1986-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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25 June 2009 in Solid State Ionics
Verified
Journal Article
Closed access
Philippe KnauthPhilippe Knauth
Philippe Knauth

2 April 2014 in Advanced Materials
Verified
Journal Article
Closed access
PDF file
BEBrian L. Ellis
Brian L. Ellis
Philippe KnauthPhilippe Knauth
Philippe Knauth
TDThierry Djenizian
Thierry Djenizian

5 December 2008 in Chemistry of Materials
Verified
Journal Article
Closed access
Gregorio F. OrtizGregorio F. Ortiz
Gregorio F. Ortiz
IHIlie Hanzu
Ilie Hanzu
TDThierry Djenizian
Thierry Djenizian
PLPedro Lavela
Pedro Lavela
JTJosé Tirado
José Tirado
Philippe KnauthPhilippe Knauth
Philippe Knauth

26 March 2005 in Chemistry of Materials
Verified
Journal Article
Closed access
AWA. Weibel
A. Weibel
Renaud BouchetRenaud Bouchet
Renaud Bouchet
FBF. Boulc'
F. Boulc'
Philippe KnauthPhilippe Knauth
Philippe Knauth

1 July 2002 in Journal of the American Ceramic Society
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Journal Article
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Philippe KnauthPhilippe Knauth
Philippe Knauth
HTHarry L. Tuller
Harry L. Tuller

15 January 1999 in Journal of Applied Physics
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Journal Article
Closed access
PDF file
Philippe KnauthPhilippe Knauth
Philippe Knauth
HTH. L. Tuller
H. L. Tuller
The electrical properties of dense nanocrystalline TiO2 ceramics with an average grain size of 35 nm were investigated by impedance spectroscopy and compared with a coarsened material with micron size grains. The nanocrystalline ceramics show an uncommon domain of ionic conductivity at high oxygen pressures and a steep increase of electronic conductivity at low oxygen pressures. These results are discussed in terms of defect chemical models. The enthalpy of reduction of the nanocrystalline TiO2 was deduced to be significantly lower than that of the coarsened material. This may be related to lower defect formation energies at interface sites.