This paper is an overview of current gyroscopes and their roles based on their applications. The considered gyroscopes include mechanical gyroscopes and optical gyroscopes at macro- and micro-scale. Particularly, gyroscope technologies commercially available, such as Mechanical Gyroscopes, silicon MEMS Gyroscopes, Ring Laser Gyroscopes (RLGs) and Fiber-Optic Gyroscopes (FOGs), are discussed. The main features of these gyroscopes and their technologies are linked to their performance.

Fibre Bragg grating (FBG) strain sensors are not only a very well-established research field, but they are also acquiring a bigger market share due to their sensitivity and low costs. In this paper we review FBG strain sensors with high focus on the underlying physical principles, the interrogation, and the read-out techniques. Particular emphasis is given to recent advances in highly-performing, single head FBG, a category FBG strain sensors belong to. Different sensing schemes are described, including FBG strain sensors based on mode splitting. Their operation principle and performance are reported and compared with the conventional architectures. In conclusion, some advanced applications and key sectors the global fibre-optic strain sensors market are envisaged, as well as the main market players acting in this field.

A theoretical investigation of silicon-on-insulator nanometer slot waveguides for highly sensitive and compact chemical and biochemical integrated optical sensing is proposed. Slot guiding structures enabling high optical confinement in a low-index very small region are demonstrated to be very sensitive to either cover medium refractive index change or deposited receptor layer thickness increase. Modal and confinement properties of slot waveguides have been investigated, considering also the influence of fabrication tolerances. Waveguide sensitivity has been calculated and compared with that exhibited by other silicon nanometer guiding structures, such as rib or wire waveguides, or with experimental values in literature.

Nowadays, optical devices and circuits are becoming fundamental components in several application fields such as medicine, biotechnology, automotive, aerospace, food quality control, chemistry, to name a few. In this context, we propose a complete review on integrated photonic sensors, with specific attention to materials, technologies, architectures and optical sensing principles. To this aim, sensing principles commonly used in optical detection are presented, focusing on sensor performance features such as sensitivity, selectivity and rangeability. Since photonic sensors provide substantial benefits regarding compatibility with CMOS technology and integration on chips characterized by micrometric footprints, design and optimization strategies of photonic devices are widely discussed for sensing applications. In addition, several numerical methods employed in photonic circuits and devices, simulations and design are presented, focusing on their advantages and drawbacks. Finally, recent developments in the field of photonic sensing are reviewed, considering advanced photonic sensor architectures based on linear and non-linear optical effects and to be employed in chemical/biochemical sensing, angular velocity and electric field detection.

Recently, non-Hermitian Hamiltonians have gained a lot of interest, especially in optics and electronics. In particular, the existence of real eigenvalues of non-Hermitian systems has opened a wide set of possibilities, especially, but not only, for sensing applications, exploiting the physics of exceptional points. In particular, the square root dependence of the eigenvalue splitting on different design parameters, exhibited by 2 × 2 non-Hermitian Hamiltonian matrices at the exceptional point, paved the way to the integration of high-performance sensors. The square root dependence of the eigenfrequencies on the design parameters is the reason for a theoretically infinite sensitivity in the proximity of the exceptional point. Recently, higher-order exceptional points have demonstrated the possibility of achieving the nth root dependence of the eigenfrequency splitting on perturbations. However, the exceptional sensitivity to external parameters is, at the same time, the major drawback of non-Hermitian configurations, leading to the high influence of noise. In this review, the basic principles of PT-symmetric and anti-PT-symmetric Hamiltonians will be shown, both in photonics and in electronics. The influence of noise on non-Hermitian configurations will be investigated and the newest solutions to overcome these problems will be illustrated. Finally, an overview of the newest outstanding results in sensing applications of non-Hermitian photonics and electronics will be provided.

This theoretical modeling and simulation paper presents designs and projected performance of non-volatile broadband on-chip 1×2 and 2×2 electro-optical switches operating in the telecommunication C-band and based on the silicon-on-insulator technological platform. These optical switches consist of an asymmetric two-waveguide directional coupler and a symmetric three-waveguide directional coupler in which the optical phase change material (O-PCM) Ge2Sb2Se4Te1 is the top cladding layer for one of the silicon strip waveguides. Reversible cross-bar switching is attained by the amorphous (Am) to crystalline (Cr) and Cr-to-Am phase transitions in the GSST induced by heating the GSST in contact with an ITO microstrip through Joule heating. We examined device performance in terms of mid-band insertion loss (IL), crosstalk (CT) and 0.3-dB-IL bandwidth (BW). The 2×2 results for the coupling length Lc of 15.4 μm were IL = -0.018 dB, CT < 31.3 dB and BW = 58 nm for $\rm 17.4 \mu m L_c$ , IL = 0.046 dB, CT < 38.1 dB and BW = 70 nm. Simulations of the 1×2 devices at 16.7 μm Lc revealed that IL = 0.083 dB, CT < 12.8 dB along with an expanded BW of 95 nm. Thermal simulations showed that a 5 V pulse train applied to $\rm 10^{19} cm^{-3}$ -doped ITO would produce crystallization; however the process of amorphization required a 24 V pulse of 2.9 μs duration to raise the GSST temperature above the 900 K melting temperature.