The optical properties of MoS₂ and WS₂ monolayers are significantly influenced by fabrication methods, especially with respect to the behavior of excitons at the K−point of the Brillouin zone. Using spectroscopic ellipsometry, we obtain the complex dielectric functions of monolayers of these materials from cryogenic to room temperatures over the energy range 1.5 to 6.0 eV. The excitonic structure of each sample is analyzed meticulously by fitting the data to a standard analytical function to extract the energy positions of the excitons at each temperature. At low temperatures, excitonic structures are blue-shifted and sharpened due to the reduction in phonon noise and lattice distance. The excitons of monolayers fabricated by MOCVD separate into sub-structures at low temperatures, while monolayers grown by LPCVD and APCVD remain a single peak. The origin of these peaks as charged or neutral excitons follows from their temperature dependences.

We report the dielectric tensors on the cleavage plane of biaxial SnS_xSe_1-x alloys in the spectral energy region from 0.74 to 6.42 eV obtained by spectroscopic ellipsometry. Single-crystal SnS_xSe_1-x alloys were grown by the temperature-gradient method. Strongly anisotropic optical responses are observed along the different principal axes. An approximate solution yields the anisotropic dielectric functions along the zigzag (a-axis) and armchair (b-axis) directions. The critical point (CP) energies of SnS_xSe_1-x alloys are obtained by analyzing numerically calculated second derivatives, and their physical origins are identified by energy band structure. Blue shifts of the CPs are observed with increasing S composition. The fundamental bandgap for Se = 0.8 and 1 in the armchair axis arises from band-to-band transitions at the M₀ minimum point instead of the M₁ saddle point as in SnS. These optical data will be useful for designing optoelectronic devices based on SnS_xSe_1-x alloys.

We report the temperature dependences of the dielectric function ε = ε₁ + iε₂ and critical point (CP) energies of the uniaxial crystal GaSe in the spectral energy region from 0.74 to 6.42 eV and at temperatures from 27 to 300 K using spectroscopic ellipsometry. The fundamental bandgap and strong exciton effect near 2.1 eV are detected only in the c-direction, which is perpendicular to the cleavage plane of the crystal. The temperature dependences of the CP energies were determined by fitting the data to the phenomenological expression that incorporates the Bose–Einstein statistical factor and the temperature coefficient to describe the electron–phonon interaction. To determine the origin of this anisotropy, we perform first-principles calculations using the mBJ method for bandgap correction. The results clearly demonstrate that the anisotropic dielectric characteristics can be directly attributed to the inherent anisotropy of p orbitals. More specifically, this prominent excitonic feature and fundamental bandgap are derived from the band-to-band transition between s and p_z orbitals at the Γ-point.

We report the absorption and photoluminescence spectra of GaSe single crystals in the near-edge region. The temperatures explored the range from 17 to 300 K. Specifically, at a temperature of 17 K, the photoluminescence spectrum reveals an interesting phenomenon: the Wannier-Mott exciton separates into two states. These states are a triplet state with an energy of 2.103 eV and a singlet state with an energy of 2.109 eV. The energy difference between these two states is 6 meV. Furthermore, the bound exciton (BX) can be localized at an energy of 2.093 eV. It is worth noting that its phonon replicas (BX-nLO) can be clearly distinguished up to the fourth order. Interestingly, the energy gaps between these replicas exhibit a consistent spacing of 7 ± 0.5 meV. This intriguing finding suggests a high-quality crystalline structure as well as a strong coupling between the phonon and BX-nLO. Additionally, at low temperatures, both the ground state (n = 1) at 2.11 eV and the excited state (n = 2) at 2.127 eV of free excitons can be observed.

We report the complex dielectric function ε = ε₁ + iε₂ of MoS₂/WS₂ and WS₂/MoS₂ heterostructures and their constituent monolayers MoS₂ and WS₂ for an energy range from 1.5 to 6.0 eV and temperatures from 39 to 300 K. Comparisons between the optical properties of the heterostructures and their monolayers were conducted. Critical-point (CP) energies of the heterostructures were traced back to their origins in the monolayers. Low-temperature measurements confirmed the existence of only three excitonic CPs from 1.5 to 2.5 eV due to the overlap of trion B⁻ of the MoS₂ monolayer and exciton A⁰ of the WS₂ monolayer. Due to the dielectric screening effect, most CPs exhibit red shifts in the heterostructures compared to their monolayer counterparts.