We present detailed theoretical analysis of nonradiative Auger recombination in narrow-gap mercury-cadmium-telluride quantum wells (HgCdTe QWs). We suggest a microscopic model to calculate Auger recombination rates in the QWs with different Cd fraction as functions of non-equilibrium carrier density with account to the complex band dispersions and wavefunctions, degenerate carrier statistics, and screening effects. Our model is validated by the comparison of measured photoconductivity kinetics with the simulated curves. Furthermore, we use the developed calculation technique to evaluate different designs of HgCdTe/CdHgTe QWs for the far-IR emitters. In particular, we consider a series of QWs with the fixed bandgap of 40 meV (lasing wavelength about 30 μm) and find out that lasing may be favored in the QWs with moderate (6%–9%) cadmium content and not in the pure binary HgTe QWs, which is in contrast to intuitive expectations within threshold energy concept for Auger recombination. Though cadmium-free QWs do provide the highest possible Auger threshold energies, Cd-containing QWs feature much more efficient screening of Coulomb potential (and so Auger interaction) by free charge carriers. The latter effect contributes decisively into the suppression of Auger processes at low temperatures and high carrier concentrations.

Long-wavelength stimulated emission (SE) is studied in optically pumped HgCdTe quantum well heterostructures with dielectric waveguides. Continuous temperature tuning of the wavelength from 27 to 18 μm is achieved in structures with optimized waveguides. Above 27 μm, SE clamps at 31 μm wavelength, where mode leaking is reduced due to the Reststrahlen effect in the GaAs substrate. The operating temperature is mainly limited by the activation of Auger recombination in quasi-equilibrium conditions, while at low temperatures, we expect that lowering initial carrier heating would enhance the gain considerably. We conclude that exploiting the Reststrahlen effect should allow one to achieve continuous wavelength tuning around 30 μm and operating wavelengths up to 40 μm with technologically attainable epistructure thickness.

Amplified interband emission within the 14–24 μm range is investigated in HgCdTe-based quantum wells under optical pumping. Carrier lifetimes are shown to be marginally limited only by Shockley–Read–Hall recombination, fully realizing the advantage of relativistic energy spectra of 2D HgCdTe in terms of suppressing the Auger processes. By carefully optimizing the waveguides and mitigating carrier heating, we achieve amplification thresholds as low as 1.5–2 W/cm2 at a pulse duration of 20–500 μs. With last generation quantum cascade lasers used for optical pumping, we estimate that continuous-wave HgCdTe lasers can operate in the very long-wavelength range (15–30 μm) and beyond.

Despite the ultimate performance of the existing cascade lasers, simple interband emitters in the mid-infrared (IR) can still be of interest as a cheaper and widely tunable alternative for some applications. In this work, we show mid-infrared stimulated emission (SE) at 5–6 μm wavelength from an optically pumped mercury–cadmium–telluride quantum well (QW) heterostructures at temperatures up to 200 K. At lower temperatures, the SE threshold appears to be mostly determined by conventional eeh Auger recombination, while the contribution of alternative QW-specific ehh Auger processes is limited. At higher temperatures, we establish heating of the electron gas by pumping radiation as a primary factor responsible for the thermal quenching of the SE. Consequently, both pumping scheme and QW designs should be carefully revised to minimize carrier heating in order to realize near-to-mid-IR optical converters operating close to ambient temperature. We suggest using low-barrier QWs to minimize excessive heat introduced in the QW upon carrier capture and also to eliminate eeh Auger processes involving excited QW subbands. Thus, mid-infrared HgCdTe lasers are expected to reach operating temperatures readily attainable under thermoelectric cooling.

We suggest and fabricate butt-joint diode lasers for efficient non-linear wave mixing in semiconductors. The first experimental demonstration of sum-frequency and second harmonic continuous-wave generation in InGaAs/GaAs/InGaP butt-joint diode lasers in the edge-emitting geometry is reported.