In this work the authors analyze a CdS/SnSe solar cell using a SnTe as a hole transport layer. We analyzed the impact of the recombination mechanisms namely radiative, and Shockley–Read–Hall in the bulk and at the interfaces using SCAPS-1D software and the impact of SnSe and CdS layer thickness. Additionally, the effect of concentration of acceptors and bulk defects in SnTe and SnSe on the performance were studied. The conditions that optimize device performance are presented. The results of the present study suggest that using a SnTe hole transport layer can result in an efficiency promotion from 0.7% to 24.48%.