14 May 2020 in Science China Chemistry
30 May 2018 in IEEE Transactions on Electron Devices
This paper investigates the effects of different passivation layers (PVLs) on the electrical performance and reliability of amorphous indium gallium zinc oxide (a-In-Ga-ZnO) thin film transistors (TFTs). By rational design, the fabricated a-InGaZnO TFT with hafnium oxide and aluminum oxide (HfO₂/Al₂O₃) dual PVLs exhibits a field-effect mobility of 13.5 cm²/Vs, low sub threshold swing of 0.32 V/decade, and especially, small threshold voltage shifts of 0.5 (-0.6) V and 1.1 (-1.2) V under positive (negative) gate bias, and light illumination stress at the relative humidity of 40%. Furthermore, the a-In-Ga-ZnO TFTs with HfO₂/Al₂O₃ dual PVLs maintain reasonable mobility and electrical performance even exposure to ambient condition for up to four months. This enhanced stability is attributed to the presence of high-quality HfO₂/Al₂O₃ dual PVLs, which not only could suppress the photodesorption, reduce the total trap density and subgap photoexcitation behavior, but also protect the channel from environmental effects. Thus, the rational-designed HfO₂/Al₂O₃ dual PVLs passivated a-In-Ga-ZnO TFTs with superior reliability represent a great step toward the achievement of long-term reliable zinc oxide-based oxide TFTs.
5 February 2018 in IEEE Transactions on Electron Devices
High-performance thin-film transistors (TFTs) were obtained by incorporating small amount of tungsten (W) into amorphous indium zinc oxide (IZO)-based thin films via a solution process. Compared with original IZO TFTs, 0.2-wt% W-doped IZO TFTs exhibit improved bias stress stability and field-effect mobility of 30.5 cm 2 /V·s. Meanwhile, the bias stress stability of IZO TFTs can be further enhanced with 0.5-wt% W-doping. The pulsed current-voltage (I-V) method is employed to study the hysteresis and charging behavior of the W-doped IZO TFTs. The X-ray photoelectron spectroscopy analysis and the pulsed I-V measurement results suggest that these desirable performances could be attributed to the suppression of excessive oxygen vacancies and improved interface quality because of W-doping. The results represent an effective strategy to achieve high-performance solution-processed amorphous oxide-based TFTs with desirable stability by W-doping.
1 February 2022 in Chinese Chemical Letters
7 November 2023 in Journal of Nanobiotechnology
The immune system is closely associated with the pathogenesis of polycystic ovary syndrome (PCOS). Macrophages are one of the important immune cell types in the ovarian proinflammatory microenvironment, and ameliorate the inflammatory status mainly through M2 phenotype polarization during PCOS. Current therapeutic approaches lack efficacy and immunomodulatory capacity, and a new therapeutic method is needed to prevent inflammation and alleviate PCOS. Here, octahedral nanoceria nanoparticles with powerful antioxidative ability were bonded to the anti-inflammatory drug resveratrol (CeO2@RSV), which demonstrates a crucial strategy that involves anti-inflammatory and antioxidative efficacy, thereby facilitating the proliferation of granulosa cells during PCOS. Notably, our nanoparticles were demonstrated to possess potent therapeutic efficacy via anti-inflammatory activities and effectively alleviated endocrine dysfunction, inflammation and ovarian injury in a dehydroepiandrosterone (DHEA)-induced PCOS mouse model. Collectively, this study revealed the tremendous potential of the newly developed nanoparticles in ameliorating the proinflammatory microenvironment and promoting the function of granulosa cells, representing the first attempt to treat PCOS by using CeO2@RSV nanoparticles and providing new insights in combating clinical PCOS.