The results of using N-isoamylisatin 4-methylphenylhydrazone for the optimization of fullerene-based heterostructures are presented. The synthesis and microscopy of thin films of this...

The interaction between microwave electromagnetic waves and conducting films with a nanometer thickness in the homogeneous region approximation and a structure consisting of micro- and nanoparticles has been numerically simulated. Using rigorous coupled-wave analysis, the dynamics of the changes in the optical coefficients from the values characteristic of a dielectric to the values for a homogeneous conducting film has been investigated and the effect of the size and distribution of conducting islands on the electrodynamic characteristics has been analyzed.

A quantum-mechanical approach to analysis of the interaction between electromagnetic radiation and ultrathin conducting films in the frequency range of 1–200 GHz is proposed. It is shown that, at film thicknesses smaller than 10 nm, it is necessary to take into account the symmetry of the conductor atomic lattice, the break of which can lead to an increase in the energy gap between the valence and conduction bands. The resulting band gap strongly affects the conductivity of a thin metallic film and its electrodynamic characteristics under interaction with the microwave radiation. It is demonstrated by the example of aluminum that the face-centered lattice symmetry break leads to the formation of a band gap of about 0.07 eV.

The paper presents the results of experimental studies and analysis of the dynamics of heating of metal-dielectric structures (MDS) with aluminum conducting films on glass or sitall substrates when exposed to powerful microwave fields, as well as when exposed to direct and alternating currents. An abnormally high temperature increase was found for a conducting film with a thickness of 5–10 nm, which occurs only when exposed to microwave fields. Comparative analysis has shown that when exposed to microwave fields, the temperature dependences on the thickness of the conducting film and the time of exposure differ diametrically from similar dependences at direct or alternating currents.

Interaction of electromagnetic radiation (250–850 nm, 2.5–15.3 μm, and 11.5–17.1 mm) with the isatin-β-anil (C₁₄H₁₀N_2O) films deposited with the aid of flow coating is considered. It is shown that the modification of original structure using N, Br, and F atoms leads to frequency deviations and variations in the amplitude of luminescence and changes of the frequency dependences of the absorption coefficients relative to those of the original isatin-β-anil.