New luminescent zinc complexes were obtained by reaction of pyrazolone-based azomethine ligands with Zn(CH3COO)2·2H2O. Complexes fully characterized by elemental analysis, FTIR, ES–MS, NMR, and single crystal X-ray analysis. Title complexes in the solid state demonstrate tunable luminescence from blue to orange by varying of substituents on the aromatic ring. Quantum yields are in the 0.03 to 0.49 range. TGA data shows that obtained complexes demonstrate high thermal stability and can be used as electroluminescent materials. The electrical properties of the complexes under study were considered in the ITO-Zncomplex-Al “sandwich” structure.
The results of using N-isoamylisatin 4-methylphenylhydrazone for the optimization of fullerene-based heterostructures are presented. The synthesis and microscopy of thin films of this...
29 December 2019 in Radioelectronics. Nanosystems. Information Technologies
An organocarbon heterostructure consisting of thin films of fullerene and 4-methylphenylhydrazone N-isoamylisatin was obtained from a solution by irrigation. The procedure for obtaining the samples, the microscopy, and synthesis of the initial powder material have been described. The results of an alternate X-ray phase analysis of the substances used has been presented. The analysis of changes in the electrical and optical characteristics of the active layers, depending on the mass of the solid phase has been carried out. The relationship between a sequential increase in film thickness and an increase in the absorption coefficient of infrared electromagnetic radiation has been revealed. Having determined the optimal thicknesses of the active layers of the heterostructure, based on fullerene C60 and 4-methylphenylhydrazone N-isoamylisatin, we achieved an increase in photoconductivity by two orders of magnitude. The obtained light current – voltage characteristics of such thin-film structures are rectilinear in nature with a direct load of up to 10 V.
The article deals with carbon films obtained by precipitation from suspensions of fullerene-containing materials (FСM) in benzene at different concentrations of C60 fullerene. Fullerene-containing material was obtained by low-temperature cracking in the processing of polymeric organic raw materials. Fullerene C60 to be added to FCM in the amount of 1–70% was produced by the method of electric arc spraying of graphite and separation using toluene. For the deposition of films, glass substrates and glass substrates with a layer of conducting indium tin oxide were used. After obtaining the film structures, the study of their surface was carried out using optical microscopy. The study showed that at low concentrations of C60 (less than 30%), individual microparticles with a size of several microns form on the surface of the films, while at high concentrations their size reaches 10 microns and more. In addition, at high concentrations, microparticles are arranged in chains. Investigation of the temperature dependences of the resistance of film structures showed that at fullerene concentrations up to 10%, the conductivity is combined. For large C60 percentages, characteristics typical of semiconductors were observed. At low fullerene concentrations in FСM (1‒5%), the current-voltage characteristics of the film structures were linear. With its increase, a nonlinear dependence of the current on voltage was observed. В статье приведены результаты исследования изменения объемных сопротивлений углеродных пленок, полученных путем осаждения из суспензий фуллеренсодержащих материалов в бензоле при различной концентрации фуллерена С60. Представлены микрофотографии поверхности пленочных структур. Рассмотрено формирование и распределение микрочастиц и их цепочек в осажденных материалах. Исследованы и показаны зависимости сопротивления от температуры и вольтамперные характеристики для полученных образцов.
About Me
graduate student, V.I. Vernadsky Crimean Federal University, Prospekt Vernadskogo 4, Simferopol, Republic of Crimea, 295007
graduate student, V.I. Vernadsky Crimean Federal University, Prospekt Vernadskogo 4, Simferopol, Republic of Crimea, 295007