Computation-in-memory using memristive devices is a promising approach to overcome the performance limitations of conventional computing architectures introduced by the von Neumann bottleneck which are also known as memory wall and power wall. It has been shown that accelerators based on memristive devices can deliver higher energy efficiencies and data throughputs when compared with conventional architectures. In the vast multitude of memristive devices, bipolar resistive switches based on the valence change mechanism (VCM) are particularly interesting due to their low power operation, non-volatility, high integration density and their CMOS compatibility. While a wide range of possible applications is considered, many of them such as artificial neural networks heavily rely on vector-matrix-multiplications (VMMs) as a mathematical operation. These VMMs are made up of large numbers of multiplication and accumulation (MAC) operations. The MAC operation can be realised using memristive devices in an analog fashion using Ohm’s law and Kirchhoff’s law. However, VCM devices exhibit a range of non-idealities, affecting the VMM performance, which in turn impacts the overall accuracy of the application. Those non-idealities can be classified into time-independent (programming variability) and time-dependent (read disturb and read noise). Additionally, peripheral circuits such as analog to digital converters can introduce errors during the digitalization. In this work, we experimentally and theoretically investigate the impact of device- and circuit-level effects on the VMM in a VCM crossbars. Our analysis shows that the variability of the low resistive state plays a key role and that reading in the RESET direction should be favored to reading in the SET direction.

While standard bipolar switching RRAM memory devices can be programmed into different resistance states, the complementary switching mechanism allows for two distinct switching locations that each can be programmed to these resistance states. In this letter, we present a technique to discriminate these switching locations and report on a novel scheme allowing for sub-μs pulse write and read of eight different logic states in Pt/Ta ₂ O ₅ /Ta/Pt devices by using only four different resistive states. Thus, in addition to the multilevel capability of bipolar switching devices, double the information can be stored and read in a single complementary switching device.

Devices made of amorphous thin films of the prototypical Mott‐insulator chromium‐doped V₂O₃ show a threshold and negative differential resistance effect after an electroforming step. Here, it is demonstrated that this effect is caused by the formation of a crystalline filament, in which a thermal runaway effect can occur. A compact model is developed that can describe the switching behavior as well as its inherent variability. The influence of the doping concentration and oxygen stoichiometry on the switching behavior is characterized and by fitting the model to the experimental data, the underlying physical changes are extracted.

The pressure‐driven Mott‐transition in Chromium doped V₂O₃ films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and doping concentrations of 2%, 5%, and 15%. A change in resistivity of nearly two orders of magnitude is found for 2% doping. A simulation model based on a scaling law description of the phase transition and percolative behavior in a resistor lattice is developed. This is used to show that despite significant deviations in the film structure from single crystals, the transition behavior is very similar. Finally, the influence of the variability between grains on the characteristics of scaled devices is investigated and found to allow for scaling down to at least 50 nm device width.

Thin films of the prototypical charge transfer insulator nickel oxide appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging, however, and mostly a p‐type semiconducting phase is reported. Here, the results of a factorial experiment are presented that allow optimization of the properties of thin films deposited using sputtering. A cluster analysis is performed, and four main types of films are found. Among them, the desired insulating phase is identified. From this material, nanoscale devices are fabricated, which demonstrate that the results carry over to relevant length scales. Initial switching results are reported.

Understanding the thermal conductivity of chromium-doped V2O3 is crucial for optimizing the design of selectors for memory and neuromorphic devices. We utilized the time-domain thermoreflectance technique to measure the thermal conductivity of chromium-doped V2O3 across varying concentrations, spanning the doping-induced metal–insulator transition. In addition, different oxygen stoichiometries and film thicknesses were investigated in their crystalline and amorphous phases. Chromium doping concentration (0%–30%) and the degree of crystallinity emerged as the predominant factors influencing the thermal properties, while the effect of oxygen flow (600–1400 ppm) during deposition proved to be negligible. Our observations indicate that even in the metallic phase of V2O3, the lattice contribution is the dominant factor in thermal transport with no observable impact from the electrons on heat transport. Finally, the thermal conductivity of both amorphous and crystalline V2O3 was measured at cryogenic temperatures (80–450 K). Our thermal conductivity measurements as a function of temperature reveal that both phases exhibit behavior similar to amorphous materials, indicating pronounced phonon scattering effects in the crystalline phase of V2O3.