Recently, the pursuit of high photoluminescence quantum yields (PLQYs) for blue emission in perovskite nanocrystals (NCs) has attracted increased attention because the QY of blue NCs lags behind those of green and red ones severely, which is fatal for three-primary-color displays. Here, we propose an in situ PbBr₆^4– octahedra passivation strategy to achieve a 96% absolute QY for the ultrapure (line width = 12 nm) blue emission from CsPbBr₃ nanoplatelets (NPLs), and both values rank first among perovskite NCs with blue emission. From the aspect of constructing intact PbBr₆^4– octahedra, additional Br^– was introduced to drive the ionic equilibrium to form intact Pb–Br octahedra. The reduced Br vacancy and inhibited nonradiative recombination processes are well proved by reduced Urbach energy, increased Pb–Br bonds, and slower transient absorption delay. Blue light-emitting diodes (LEDs) using NPLs were fabricated, and a high external quantum efficiency (EQE) of 0.124% with an emission line width of ∼12 nm was realized. This work will provide good references to break the “blue-wall” in perovskite NCs.

Perovskite quantum-dot-based light-emitting diodes (QLEDs) possess the features of wide gamut and real color expression, which have been considered as candidates for high-quality lightings and displays. However, massive defects are prone to be reproduced during the quantum dot (QD) film assembly, which would sorely affect carrier injection, transportation and recombination, and finally degrade QLED performances. Here, we propose a bilateral passivation strategy through passivating both top and bottom interfaces of QD film with organic molecules, which has drastically enhanced the efficiency and stability of perovskite QLEDs. Various molecules were applied, and comparison experiments were conducted to verify the necessity of passivation on both interfaces. Eventually, the passivated device achieves a maximum external quantum efficiency (EQE) of 18.7% and current efficiency of 75 cd A⁻¹. Moreover, the operational lifetime of QLEDs is enhanced by 20-fold, reaching 15.8 h. These findings highlight the importance of interface passivation for efficient and stable QD-based optoelectronic devices.