Semiconducting metal oxides are gaining attention in thermoelectric applications, where performance is evaluated by the figure of merit (ZT), which depends on the power factor (S²σ) and thermal conductivity (κ). However, achieving high ZT values in these materials remains challenging. This study introduces a distinct strategy to enhance thermoelectric performance by infiltrating aluminum-doped zinc oxide (AZO) into poly(methyl methacrylate) (PMMA) films using the vapor-phase infiltration (VPI) technique. The resulting AZO/PMMA hybrid films exhibit a unique composite structure with AZO nanocrystals embedded within an amorphous PMMA matrix. This structure facilitates energy-dependent carrier scattering (the energy filtering effect) at the AZO/PMMA interfaces, thereby enhancing the Seebeck coefficient, while phonon scattering at the interfaces reduces thermal conductivity. By precisely controlling VPI parameters, we achieved a uniform dispersion of AZO nanocrystals within the PMMA matrix. The optimized AZO/PMMA hybrid film demonstrated a power factor of 1306 μW m⁻¹ K⁻² and a thermal conductivity of 1.02 W m⁻¹ K⁻¹, resulting in a ZT value of approximately 0.384 at 300 K, which is one of the highest reported for metal oxide thermoelectric materials near room temperature. The successful integration of AZO into the PMMA matrix via VPI opens new pathways for developing high-performance, flexible thermoelectric materials.

A monolithic Cs ₄ PbBr ₆ /CsPbBr ₃ heterojunction leverages extreme dimensional mismatch to decouple electronic and ionic transport. This asymmetric interface demonstrates how electronic band alignment can reversibly modulate macroscopic ion migration.