In this paper SiOx thin films were deposited on Y-TZP ceramics by reactive magnetron sputtering technique in order to improve the adhesion properties between Y-TZP and resin cement for applications in dental prosthesis. For fixed cathode voltage, target current, working pressure and target-to-substrate distance, SiOx thin films were deposited at different oxygen concentrations in the Ar+O-2 plasma forming gas. After deposition processes, SiOx thin films were characterized by profilometry, energy dispersive spectroscopy (EDS), optical microscopy and scanning electron microscopy (SEM). Adhesion properties between Y-TZP and resin cement were evaluated by shear testing. Results indicate that films deposited at 20%O-2 increased the bond strength to (32.8 +/- 5.4) MPa. This value has not been achieved by traditional methods

In this paper, nitrogen-doped TiO₂thin films were deposited by DC reactive sputtering at different doping levels for the development of dye-sensitized solar cells. The mechanism of film growth during the sputtering process and the effect of the nitrogen doping on the structural, optical, morphological, chemical, and electronic properties of the TiO₂were investigated by numerical modeling and experimental methods. The influence of the nitrogen doping on the working principle of the prototypes was investigated by current-voltage relations measured under illuminated and dark conditions. The results indicate that, during the film deposition, the control of the oxidation processes of the nitride layers plays a fundamental role for an effective incorporation of substitutional nitrogen in the film structure and cells built with nitrogen-doped TiO₂have higher short-circuit photocurrent in relation to that obtained with conventional DSSCs. On the other hand, DSSCs built with nondoped TiO₂have higher open-circuit voltage. These experimental observations indicate that the incorporation of nitrogen in the TiO₂lattice increases simultaneously the processes of generation and destruction of electric current.

Niobium doped dititanium trioxide (Ti₂O₃:Nb) films were deposited on glass substrates, through grid-assisted magnetron sputtering. The Ti₂O₃:Nb films were characterized by X-ray diffraction (XRD), electrical conductivity and optical properties. Film deposition was carried out in two different substrate bias modes: DC and unipolar pulsed. Results show that the negative-pulsed mode improves conductivity and crystallinity. The XRD results show peaks corresponding crystallographic planes of Ti₂O₃. No niobium oxide Nb_xO_y peaks were observed, which indicates that niobium oxide if formed, is amorphous, and/or substituted Nb atoms remain in a solid solution within the Ti2O3 structure. It was observed that "as-deposited" Ti₂O₃:Nb films (without post annealing) are transparent and electrical conductive, with transmittance that reaches 60% in the visible light wavelength despite the considerable thickness of the film and a miminum resistivity of 2x10^-2 Ω.cm which indicates that there is potential for application as Transparent Conductive Oxide (TCO).