Spin current generators are critical components for spintronics-based information processing. In this work, we theoretically and computationally investigate the bulk spin photovoltaic (BSPV) effect for creating DC spin current under light illumination. The only requirement for BSPV is inversion symmetry breaking, thus it applies to a broad range of materials and can be readily integrated with existing semiconductor technologies. The BSPV effect is a cousin of the bulk photovoltaic (BPV) effect, whereby a DC charge current is generated under light. Thanks to the different selection rules on spin and charge currents, a pure spin current can be realized if the system possesses mirror symmetry or inversion-mirror symmetry. The mechanism of BSPV and the role of the electronic relaxation time $$\tau$$τ are also elucidated. We apply our theory to several distinct materials, including monolayer transition metal dichalcogenides, anti-ferromagnetic bilayer MnBi₂Te₄, and the surface of topological crystalline insulator cubic SnTe.

It is postulated in Einstein's relativity that the speed of light in vacuum is a constant for all observers. However, the effect of quantum gravity could bring an energy dependence of light speed. Even a tiny speed variation, when amplified by the cosmological distance, may be revealed by the observed time lags between photons with different energies from astrophysical sources. From the newly detected long gamma ray burst GRB 160509A, we find evidence to support the prediction for a linear form modification of light speed in cosmological space

Significance: Manipulating materials with atomic-scale precision is essential for the development of a next-generation material design toolbox. Tremendous efforts have been made to advance the compositional, structural, and spatial accuracy of material deposition and patterning. Here, we presented a new reaction pathway to implement the conversions of two-dimensional materials within the atomic-layer thickness at room temperature for electrical dipole manipulation. Not only could various Janus monolayer transition metal dichalcogenides with vertical dipole be realized, but also some heterostructures, including the dipole-nondipole heterostructures (MoS₂-MoSSe) and multiheterostructures (MoS₂-MoSSe-MoSeS-MoSe₂) within the same monolayer host structure are developed, in which the dipoles can be selectively patterned to be zero (MoS₂, MoSe₂), positive (MoSSe), and negative (MoSeS).

Nonlinear optical properties, such as bulk photovoltaic effects, possess great potential in energy harvesting, photodetection, rectification, etc. To enable efficient light–current conversion, materials with strong photo-responsivity are highly desirable. In this work, we predict that monolayer Janus transition metal dichalcogenides (JTMDs) in the 1T′ phase possess colossal nonlinear photoconductivity owing to their topological band mixing, strong inversion symmetry breaking, and small electronic bandgap. 1T′ JTMDs have inverted bandgaps on the order of 10 meV and are exceptionally responsive to light in the terahertz (THz) range. By first-principles calculations, we reveal that 1T′ JTMDs possess shift current (SC) conductivity as large as 2300 nm μA V⁻², equivalent to a photo-responsivity of 2800 mA/W. The circular current (CC) conductivity of 1T′ JTMDs is as large as ∼10⁴ nm μA V⁻². These remarkable photo-responsivities indicate that the 1T′ JTMDs can serve as efficient photodetectors in the THz range. We also find that external stimuli such as the in-plane strain and out-of-plane electric field can induce topological phase transitions in 1T′ JTMDs and that the SC can abruptly flip their directions. The abrupt change of the nonlinear photocurrent can be used to characterize the topological transition and has potential applications in 2D optomechanics and nonlinear optoelectronics.