Purushothaman Srinivasan (SP) is currently a Senior Member of Technical Staff (SMTS) working as a RF reliability team leader for CMOS Si technologies, at GLOBALFOUNDRIES, Malta, NY. He is currently focused on RF reliability in advanced CMOS nodes (45, 22, 14/12nm nodes). He was also a GLOBALFOUNDRIES assignee member at IBM, Albany until 2015. His research areas include high-k metal gate, SiGe-based transistors, Negative Bias Temperature Instability, low frequency (1/f) noise and Random Telegraph Signals (RTS). From 2007-2012, he was a Research Staff Member at Texas Instruments, Dallas and was an adjunct professor in the MSE department at University of Texas, Dallas from 2010-2012. Since 2008, he has been an Executive Committee member of Dielectric Science and Technology Division at Electrochemical Society. He has been serving the IRPS transistor sub-committee since 2017 and served the Process Integration sub-committee in 2019. Prior to joining TI, he obtained his PhD degree from IMEC, Leuven, Belgium and New Jersey Institute of Technology, Newark, NJ. He is also a senior member of IEEE, holds IEEE membership for 15 years, has edited five books, holds 5 patents, >25 invited talks authored and co-authored more than 150 international publications with over 1000 citations. His conference publications include top tier conferences at IEDM and VLSI. He currently as a reviewer for at least six journals, including the Journal of The Electrochemical Society and IEEE TED, EDL, JEDS.