Solution-processed planar perovskite devices are highly desirable in a wide variety of optoelectronic applications; however, they are prone to hysteresis and current instabilities. Here we report the first perovskite–PCBM hybrid solid with significantly reduced hysteresis and recombination loss achieved in a single step. This new material displays an efficient electrically coupled microstructure: PCBM is homogeneously distributed throughout the film at perovskite grain boundaries. The PCBM passivates the key PbI₃⁻ antisite defects during the perovskite self-assembly, as revealed by theory and experiment. Photoluminescence transient spectroscopy proves that the PCBM phase promotes electron extraction. We showcase this mixed material in planar solar cells that feature low hysteresis and enhanced photovoltage. Using conductive AFM studies, we reveal the memristive properties of perovskite films. We close by positing that PCBM, by tying up both halide-rich antisites and unincorporated halides, reduces electric field-induced anion migration that may give rise to hysteresis and unstable diode behaviour.

Colloidal quantum dots (CQDs) are fast-improving materials for next-generation solution-processed optoelectronic devices such as solar cells, photocatalysis, light emitting diodes, and photodetectors.

Organometallic halide perovskites are a class of solution-processed semiconductors exhibiting remarkable optoelectronic properties. They have seen rapid strides toward enabling efficient third-generation solar cell technologies. Here, we report the first material-tailoring of TiO₂/perovskite/spiro-OMeTAD junction-based photodiodes toward applications in photodetection, a field in need of fast, sensitive, low-cost, spectrally tunable materials that offer facile integration across a broad range of substrates. We report photodetection that exhibits 1 μs temporal response, and we showcase stable operation in the detection of over 7 billion transient light pulses through a continuous pulsed-illumination period. The perovskite diode photodetector has a peak responsivity approaching 0.4 A W^–1 at 600 nm wavelength, which is superior to red light detection in crystalline silicon photodiodes used in commercial image sensors. Only by developing a composite Al₂O₃/PCBM front contact interface layer were we able to stabilize device operation in air, reduce dark current, and enhance the responsivity in the low-bias regime to achieve an experimentally measured specific detectivity of 10¹² Jones.