In this paper, zinc nitride (Zn₃N₂)-based flexible thin-film transistors (TFTs) are presented. The zinc nitride thin film is deposited by magnetron radio frequency sputtering at room temperature, while spin-on glass and aluminum were used as gate insulator and source/drain electrode, respectively. Polyethylene terephthalate is used as flexible substrate. The flexible Zn₃N₂ TFTs were characterized while bent to 5-mm tensile radius. The flexible TFTs exhibit an electron mobility of 3.8 cm²/V· s and an ON/OFF current ratio close to 10⁵ after several cycles of bending and being exposed to air ambient for 30 days.

In this work, an unusual ambipolar behavior in zinc nitride (Zn ₃ N ₂ ) based thin film transistors (TFTs) on plastic substrates is presented. Polyethylene terephthalate is used as flexible substrate. The Zn ₃ N ₂ thin film is deposited by magnetron radio-frequency sputtering at room temperature, whereas spin-on glass is used as gate insulator. The transfer and output characteristics are the typical reported for ambipolar TFTs. The extracted linear mobility was 1.8 cm ² V ⁻¹ s ⁻¹ for the n-type region and 0.15 cm ² V ⁻¹ s ⁻¹ for the p-type region. Using a physically-based simulator, the ambipolar output characteristics are simulated. The results presented are promising to develop novel ambipolar Zn ₃ N ₂ TFTs.