In this paper, a n-i-p planar heterojunction simulation of Sn-based iodide perovskite solar cell (PSC) is proposed. The solar cell structure consists of a Fluorine-doped tin oxide (FTO) substrate on which titanium oxide (TiO₂) is placed; this material will act as an electron transporting layer (ETL); then, we have the tin perovskite CH₃NH₃SnI₃ (MASnI₃) which is the absorber layer and next a copper zinc and tin sulfide (CZTS) that will have the function of a hole transporting layer (HTL). This material is used due to its simple synthesis process and band tuning, in addition to presenting good electrical properties and stability; it is also a low-cost and non-toxic inorganic material. Finally, gold (Au) is placed as a back contact. The lead-free perovskite solar cell was simulated using a Solar Cell Capacitance Simulator (SCAPS-1D). The simulations were performed under AM 1.5G light illumination and focused on getting the best efficiency of the solar cell proposed. The thickness of MASnI₃ and CZTS, band gap of CZTS, operating temperature in the range between 250 K and 350 K, acceptor concentration and defect density of absorber layer were the parameters optimized in the solar cell device. The simulation results indicate that absorber thicknesses of 500 nm and 300 nm for CZTS are appropriate for the solar cell. Further, when optimum values of the acceptor density (N_A) and defect density (N_t), 10¹⁶ cm⁻³ and 10¹⁴ cm⁻³, respectively, were used, the best electrical values were obtained: J_sc of 31.66 mA/cm², V_oc of 0.96 V, FF of 67% and PCE of 20.28%. Due to the enhanced performance parameters, the structure of the device could be used in applications for a solar energy harvesting system.

Sulfur kesterite (CZTS) solar cells on transparent substrate (FTO) showing η = 7.3% and V _oc = 700 mV (structure: SLG/FTO/Mo (20 nm)/CZTS/Al ₂ O ₃ /CdS/i-ZnO/ITO) and η = 7.7% and V _oc = 677 mV (structure: SLG/FTO/Mo (20 nm)/CZTS/CdS/i-ZnO/ITO).

We studied the influences of the thickness of the porous silicon layer and the conductivity type on the porous silicon sensors response when exposed to ethanol vapor. The response was determined at room temperature (27 ${}^{\circ }$C) in darkness using a horizontal aluminum electrode pattern. The results indicated that the intensity of the response can be directly or inversely proportional to the thickness of the porous layer depending on the conductivity type of the semiconductor material. The response of the porous sensors was similar to the metal oxide sensors. The results can be used to appropriately select the conductivity of semiconductor materials and the thickness of the porous layer for the target gas.

Light emitting capacitors (LECs) were fabricated using silicon rich oxide (SRO) films as active layer. Blue and red electroluminescence (EL) was observed by changing the silicon nanoparticle (Si-np) size from 1.5 to 2.7 nm embedded in the silica matrix. EL is ascribed to the charge injection into the Si-nps embedded in the SRO films through a balanced transport network. The EL emission is observed with the naked eye and in daylight conditions on the whole area of devices. Therefore, these results prove the feasibility to obtain LECs by using simple capacitors with SRO films as the active layer.

Mixed-halide perovskites enable the creation of high-performance and low-cost solar cells. Chloride incorporation enhances film morphology, carrier diffusion length, and stability, improving device performance. Nevertheless, optimizing film thickness, defect density, and metal contact work function remains insufficiently explored, despite its potential to enhance power conversion efficiency. In this study, a numerical simulation was performed using SCAPS-1D (version 3.3.10) to identify the optimal parameters for the FTO/TiO₂/CH₃NH₃Pb_3−xCl_x/Spiro-OMeTAD/Au configuration. The best performance parameters that have been published in the literature based on experimental results are as follows: V_OC = 1.077 V, J_SC = 21.45 mA/cm², FF = 77.57%, and PCE = 17.97%. In contrast, the performance parameters obtained from numerical simulations for the same structure are V_OC = 1.28 V, J_SC = 21.63 mA/cm², FF = 78%, and PCE = 21.53%. In our numerical analysis, we achieved efficiencies that were comparable to those reported in experimental studies, and after optimization, superior performance parameters were attained, including V_OC = 1.179 V, J_SC = 27.26 mA/cm², FF = 81.03%, and PCE = 26.07%. These results indicate that optimized parameters can be integrated into the design and fabrication of mixed-halide perovskite solar cells to enhance performance.

Inverted perovskite solar cells (PSCs) have gained much attention due to their low hysteresis effect, easy fabrication, and good stability. In this research, an inverted perovskite solar cell ITO/PEDOT:PSS/CH₃NH₃PbI₃/PCBM/Ag structure was simulated and optimized using SCAPS-1D version 3.3.10 software. The influence on the device of parameters, including perovskite thickness, total defect density, series and shunt resistances, and operating temperature, are discussed and analyzed. With optimized parameters, the efficiency increased from 13.47% to 18.33%. Then, a new $\mathrm{Si}{\mathrm{O}}_{\mathrm{x}}$/ITO/PEDOT:PSS/CH₃NH₃PbI₃/PCBM/Ag device was proposed which includes a silicon-rich oxide ($\mathrm{Si}{\mathrm{O}}_{\mathrm{x}}$) layer. This material was used as the down-conversion energy material, which converts high-energy photons (ultraviolet UV light) into low-energy photons (visible light), improving the stability and absorption of the device. Finally, with $\mathrm{Si}{\mathrm{O}}_{\mathrm{x}}$, we obtained an efficiency of 22.46% in the simulation. Therefore, the device with the $\mathrm{Si}{\mathrm{O}}_{\mathrm{x}}$ layer is the most suitable as it has better values for current density–voltage output and quantum efficiency than the device without $\mathrm{Si}{\mathrm{O}}_{\mathrm{x}}$.