Ramazan Demir

Dr. Ramazan Demir

orcid

Research Focus & Metrics

Academic Career Length

27Years (2000-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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7 February 2012 in Industrial & Engineering Chemistry Research
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RDRamazan Demir
Ramazan Demir
SOSalih Okur
Salih Okur
MŞMavişe Şeker
Mavişe Şeker

4 April 2011 in Industrial & Engineering Chemistry Research
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Journal Article
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RDRamazan Demir
Ramazan Demir
SOSalih Okur
Salih Okur
MŞMavişe Şeker
Mavişe Şeker
MZMuhsin Zor
Muhsin Zor
Thin films of CdS nanoparticles were synthesized by the chemical bath deposition (CBD) technique to investigate humidity response characteristics. The morphology and the crystal structure of CdS thin films were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. The quartz crystal microbalance (QCM) technique was used to measure the water vapor adsorption and desorption rates of CdS thin films. The dynamic Langmuir model was used to analyze the kinetics of the moisture adsorption and desorption process under relative humidity (RH) between 17 and 85% RH. Our results indicate that CdS thin films have a great affinity to humidity at room temperature.DPT2003-K120390; TUBITAK TBAG 109T240; IYTE (2010IYTE25

4 March 2019 in Journal of Materials Science: Materials in Electronics
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RDRamazan Demir
Ramazan Demir
IKİsMet Kaya
İsMet Kaya

1 January 2018 in Open Chemistry
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RDRamazan Demir
Ramazan Demir
IKIsmet Kaya
Ismet Kaya
The synthesized Schiff base polymers were investigated for humidity and chloroform response characteristics. The crystal structure of polymers were analyzed using X-ray diffraction (X-RD) method. We used the QCM (quartz crystal microbalance) method for the analyses of the water steam adsorption and desorption ratio of polymers. The experimental results showed that Schiff base polymers were very sensitive to humidity and chloroform at room temperature and it was possible to use it as a sensing element in moisture sensor applications.

1 June 2018 in Materials Focus
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RDRamazan Demir
Ramazan Demir
FGFatma Göde
Fatma Göde
Cadmium sulfide (CdS) thin films are deposited on microscope glass substrates at 82 +/- 2 degrees C for 1 h using chemical bath deposition technique. Deposited films are annealed at 350 degrees C for 1 h in air atmosphere. Their structural, morphological, compositional analysis and optical properties are studied by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and UV-Vis spectrophotometer, respectively. The XRD patterns show that both deposited and annealed CdS films have hexagonal structure with preferred orientation along the (0 0 2) plane. The grain size of the deposited film increases with annealing. The optical properties of the films are determined by measuring transmittance and absorbance spectra which are used to evaluate the optical band gap, refractive index, real and imaginary parts of dielectric constant. The band gap of the film decreases from 2.06 eV to 1.95 eV with annealing. Currentvoltage (IV) measurements are also carried out in the dark for as-grown and annealed films. The electrical conductivity of the film increases from 2.12 x 10 (11) (Omega cm)(1) to 2.02 x 10 1 (10) (Omega cm)(1) after heat treatment. An increment in electrical conductivity of the film after annealing process can be attributed to an increase in electron density and mobility, as well as an increment in grain size

27 March 2024 in Celal Bayar Üniversitesi Fen Bilimleri Dergisi
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RDRamazan Demir
Ramazan Demir
İsmet Kayaİsmet Kaya
İsmet Kaya
We fabricated a heterojunction structure composed of n-CdS and p-C10H10N2 films. The CdS film was prepared using the CBD method, while the C10H10N2 film was prepared using the spin coating method. Later, we performed the current-voltage (I-V) measurement of this PN diode which we made using Keithley 2400 sourcemeter. As can be seen from the logI-V diagram, this heterojunction structure exhibits rectifying properties. Using traditional methods, an ideality factor (n) of 1.93 and a barrier height value (Φb) of 0.79 eV were determined. An ideality factor of more than one indicates non-ideal I-V behavior in the CdS/C10H10N2 heterojunction diode formed. The interface layer, interface states and series resistance are some of the causes of this deviation. Moreover, Cheung's functions and a modified Norde function were used to determine the diode parameters, such as ideality factor, barrier height, and series resistance. With the Cheung method, n=4.33, series resistance (RS)=168.65 kΩ and Φb=0.62 eV were found. Additionally, RS=686.08 kΩ and Φb=0.78 eV were found by the Norde method. Consistent barrier height values were found in all methods through comparison, suggesting compatibility. However, it was discovered that the series resistance values yielded by the Norde function exceeded those obtained by the Cheung functions.