Xin Rong

Dr. Xin Rong

Peking University, Beijing, China
orcid

Research Focus & Metrics

Academic Career Length

14Years (2013-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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13 February 2015 in Scientific Reports
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Journal Article
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HZHui Zhang
Hui Zhang
YMYaoguang Ma
Yaoguang Ma
YWYi Wan
Yi Wan
XRXin Rong
Xin Rong
ZXZiang Xie
Ziang Xie
Lun DaiLun Dai
Lun Dai
Monolayer molybdenum disulphide (MoS2) has attracted much attention, due to its attractive properties, such as two-dimensional properties, direct bandgap, valley-selective circular dichroism and valley Hall effect. However, some of its fundamental physical parameters, e.g. refractive index, have not been studied in detail because of measurement difficulties. In this work, we have synthesized highly crystalline monolayer MoS2 on SiO2/Si substrates via chemical vapor deposition (CVD) method and devised a method to measure their optical contrast spectra. Using these contrast spectra, we extracted the complex refractive index spectrum of monolayer MoS2 in the wavelength range of 400 nm to 750 nm. We have analyzed the pronounced difference between the obtained complex refractive index spectrum and that of bulk MoS2. The method presented here is effective for two-dimensional materials of small size. Furthermore, we have calculated the color contour plots of the contrast as a function of both SiO2 thickness and incident light wavelength for monolayer MoS2 using the obtained refractive index spectrum. These plots are useful for both fundamental study and device application.

8 July 2018 in Advanced Materials
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Journal Article
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Ziwei LiZiwei Li
Ziwei Li
Changxu LiuChangxu Liu
Changxu Liu
XRXin Rong
Xin Rong
YLYang Luo
Yang Luo
HCHaotian Cheng
Haotian Cheng
ZFZheyu Fang
Zheyu Fang

6 July 2016 in Advanced Materials
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Journal Article
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XRXin Rong
Xin Rong
XWXinqiang Wang
Xinqiang Wang
SISergey V. Ivanov
Sergey V. Ivanov
XJXinhe Jiang
Xinhe Jiang
GCGuang Chen
Guang Chen
Bo ShenBo Shen
Bo Shen

12 November 2015 in Journal of Materials Chemistry C
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LYLi Yao
Li Yao
TYTing Yu
Ting Yu
LBLixiang Ba
Lixiang Ba
HMHu Meng
Hu Meng
XFXin Fang
Xin Fang
GQGuogang Qin
Guogang Qin
We use silicon quantum dots (SiQDs) with an average diameter of 2.6 ± 0.5 nm as the light emitting material and fabricate inverted structure light emitting diodes (SiQD-LEDs) with bottom cathodes. ZnO nanoparticles with high electron mobility, a deep valence band edge, and robust features to resist dissolving by the SiQD solvent were used as the electron transport layer. 1,1-Bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) with high hole transport mobility and a high lowest unoccupied molecular orbital level was used as the hole transport layer. Poly(ethylene imine) (PEI) modified indium-tin oxide (ITO) was used as the low work function (∼3.1 eV) cathode and MoO3/Al as the high work function anode. Electroluminescence of the SiQD-LEDs is mainly from the SiQDs with a peak located at ∼700 nm. The maximum external quantum efficiencies of the SiQD-LEDs are 2.7%.

26 March 2019 in Advanced Optical Materials
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YWYixin Wang
Yixin Wang
XRXin Rong
Xin Rong
SISergey Ivanov
Sergey Ivanov
VJValentin Jmerik
Valentin Jmerik
ZCZhaoying Chen
Zhaoying Chen
XWXinqiang Wang
Xinqiang Wang

1 May 2016 in Superlattices and Microstructures
Verified
Journal Article
Closed access
XRXin Rong
Xin Rong
XWXinqiang Wang
Xinqiang Wang
GCGuang Chen
Guang Chen
JPJianhai Pan
Jianhai Pan
PWPing Wang
Ping Wang
BSBo Shen
Bo Shen