Single-photon avalanche diodes (SPADs) fabricated in conventional CMOS processes typically have limited near infra-red (NIR) sensitivity. This is the consequence of isolating the SPADs in a lowly-doped deep N-type well. In this work, we present a second improved version of the “current-assisted” single-photon avalanche diode, fabricated in a conventional 350 nm CMOS process, having good NIR sensitivity owing to 14 μm thick epilayer for photon absorption. The presented device has a photon absorption area of 30 × 30 µm², with a much smaller central active area for avalanche multiplication. The photo-electrons generated in the absorption area are guided swiftly towards the central area with a drift field created by the “current-assistance” principle. The central active avalanche area has a cylindrical p-n junction as opposed to the square geometry from the previous iteration. The presented device shows improved performance in all aspects, most notably in photon detection probability. The p-n junction capacitance is estimated to be ~1 fF and on-chip passive quenching with source followers is employed to conserve the small capacitance for bringing monitoring signals off-chip. Device physics simulations are presented along with measured dark count rate (DCR), timing jitter, after-pulsing probability (APP) and photon detection probability (PDP). The presented device has a peak PDP of 22.2% at a wavelength of 600 nm and a timing jitter of 220 ps at a wavelength of 750 nm.

We study the light matter interaction in WS$_{2}$ nanotube-graphene hybrid devices. Using scanning photocurrent microscopy we find that by engineering graphene electrodes for WS$_{2}$ nanotubes we can improve the collection of photogenerated carriers. We observe inhomogeneous spatial photocurrent response with an external quantum efficiency of $\sim 1\%$ at 0 V bias. We show that defects play an important role and can be utilized to enhance and tune photocarrier generation

This review paper presents an assortment of research on a family of photodetectors which use the same base mechanism, current assistance, for the operation. Current assistance is used to create a drift field in the semiconductor, more specifically silicon, in order to improve the bandwidth and the quantum efficiency. Based on the detector and application, the drift field can be static or modulated. Applications include 3D imaging (both direct and indirect time-of-flight), optical receivers and fluorescence lifetime imaging. This work discusses the current-assistance principle, the various photodetectors using this principle and a comparison is made with other state-of-the-art photodetectors used for the same application.

A current assisted avalanche photodetector (CAAPD) is presented with a large detection window of 40 × 40 μm², having a small 1-fF avalanche diode in its center. To quickly guide the photogenerated electrons to the center for avalanche multiplication, a drift field with associated majority hole current is applied across the neutral detection volume. This first type of CAAPD is fabricated in a conventional 350-nm CMOS process on a high resistive p⁻ epi-layer. The low diode-junction capacitance can be of interest to integrated receivers. The CAAPD is characterized for its basic functionality, including the effects of lateral detection delay and gain.

A current-assisted single-photon avalanche diode (CASPAD) is presented with a large and deep absorption volume combined with a small p-n junction in its middle to perform avalanche trigger detection. The absorption volume has a drift field that serves as a guiding mechanism to the photo-generated minority carriers by directing them toward the avalanche breakdown region of the p-n junction. This drift field is created by a majority current distribution in the thick (highly-resistive) epi-layer that is present because of an applied voltage bias between the p-anode of the avalanching region and the perimeter of the detector. A first CASPAD device fabricated in 350-nm CMOS shows functional operation for NIR (785-nm) photons; absorbed in a volume of 40 × 40 × 14 μm³. The CASPAD is characterized for its photon-detection probability (PDP), timing jitter, dark-count rate (DCR), and after pulsing.

This letter proposes a novel SPAD-based pixel, designed for direct time-of-flight (dToF) imaging with in-pixel averaging, which provides a promising advancement in low-power and potentially high image resolution for outdoor applications. By utilizing a laser pulse and two orthogonal sinusoidal signals, the pixel averages out the detected ambient light while accumulating the laser pulse round-trip time. A prototype pixel array was fabricated using a 180 nm CMOS process, featuring a commercial SPAD cell. By characterizing one pixel and employing a 100 klux solar emulator as an ambient light source with a fixed 40 ambient-to-signal ratio (ASR) over a 360 $^{\circ }$ phase shift, equivalent to 6 m detection range, the maximum detected accuracy error was 3.3 %, with a 5 cm precision.