Single-photon avalanche diodes (SPADs) fabricated in conventional CMOS processes typically have limited near infra-red (NIR) sensitivity. This is the consequence of isolating the SPADs in a lowly-doped deep N-type well. In this work, we present a second improved version of the “current-assisted” single-photon avalanche diode, fabricated in a conventional 350 nm CMOS process, having good NIR sensitivity owing to 14 μm thick epilayer for photon absorption. The presented device has a photon absorption area of 30 × 30 µm², with a much smaller central active area for avalanche multiplication. The photo-electrons generated in the absorption area are guided swiftly towards the central area with a drift field created by the “current-assistance” principle. The central active avalanche area has a cylindrical p-n junction as opposed to the square geometry from the previous iteration. The presented device shows improved performance in all aspects, most notably in photon detection probability. The p-n junction capacitance is estimated to be ~1 fF and on-chip passive quenching with source followers is employed to conserve the small capacitance for bringing monitoring signals off-chip. Device physics simulations are presented along with measured dark count rate (DCR), timing jitter, after-pulsing probability (APP) and photon detection probability (PDP). The presented device has a peak PDP of 22.2% at a wavelength of 600 nm and a timing jitter of 220 ps at a wavelength of 750 nm.

This review paper presents an assortment of research on a family of photodetectors which use the same base mechanism, current assistance, for the operation. Current assistance is used to create a drift field in the semiconductor, more specifically silicon, in order to improve the bandwidth and the quantum efficiency. Based on the detector and application, the drift field can be static or modulated. Applications include 3D imaging (both direct and indirect time-of-flight), optical receivers and fluorescence lifetime imaging. This work discusses the current-assistance principle, the various photodetectors using this principle and a comparison is made with other state-of-the-art photodetectors used for the same application.

Fluorescence imaging has been widely used in fields like (pre)clinical imaging and other domains. With advancements in imaging technology and new fluorescent labels, fluorescence lifetime imaging is gradually gaining recognition. Our research department is developing the tauCAM^TM, based on the Current-Assisted Photonic Sampler, to achieve real-time fluorescence lifetime imaging in the NIR (700–900 nm) region. Incorporating fluorescence lifetime into endoscopy could further improve the differentiation of malignant and benign cells based on their distinct lifetimes. In this work, the capabilities of an endoscopic lifetime imaging system are demonstrated using a rigid endoscope involving various phantoms and an IRF-free deep learning-based method with only 6-time points. The results show that this application’s fluorescence lifetime image has better lifetime uniformity and precision with 6-time points than the conventional methods.

A 64 × 64-pixel current-assisted photonic sampler (CAPS) image sensor is designed for real-time fluorescence lifetime (FLT) imaging. Current-assistance is used for swift detection and time-gating of the photogenerated carriers within the whole substrate. An additional bias node is used to decrease the dynamic power consumption and a photogate is applied to the sensor to reduce the carrier transfer time. The sensor is fabricated in a commercial 350nm CMOS process on a 15μm epi-layer, with 30μm pixels and a 61% fill factor. The pixel features gating widths below 1 ns subject to a 17 ps standard deviation on the gate width uniformity, and a 31 ps standard deviation on its temporal position. The pixel has a quantum efficiency (QE) above 40% for near-infrared (NIR) wavelengths, whereas the peak QE is 61% at 675 nm. The gate’s intrinsic decay is observed to be 320 ps, which allows for the FLT imaging of sub-nanosecond lifetime dyes. The real-time FLT imaging capabilities are demonstrated on commercial fluorescence phantoms and in a preclinical experiment.

Correlation-Assisted Direct Time-of-Flight (CA-dToF) is demonstrated for the first time on a large 320 × 240-pixel SPAD array sensor that includes on-chip high-speed timing support circuitry. SPAD events are processed in-pixel, avoiding data communication over the array and/or storage bottlenecks. This is accomplished by sampling two orthogonal triangle waves that are synchronized with short light pulses illuminating the scene. Using small switched-capacitor circuits, exponential moving averaging (EMA) is applied to the sampled voltages, delivering two analog voltages (VQ2, VI2). These contain the phase delay, or the time of flight between the light pulse and photon’s time of arrival (ToA). Uncorrelated ambient photons and dark counts are averaged out, leaving only their associated shot noise impacting the phase precision. The QVGA camera allows for capturing depth-sense images with sub-cm precision over a 6 m range of detection, even with a small PDE of 0.7% at an 850 nm wavelength.

Correlation-Assisted Direct Time-of-Flight (CA-dToF) is demonstrated for the first time with a 320×240-pixel SPAD array. SPAD triggers are processed in-pixel, avoiding data communication over the array and/or storage bottlenecks. This is accomplished by sampling two orthogonal triangle waves that are synchronized with short light pulses illuminating the scene. Using small switched-capacitor circuits, exponential-moving-averaging (EMA) is applied to the sampled voltages, delivering two analog voltages (VQ2, VI2). These contain the phase delay, or the time of flight between the light pulse and photon’s time of arrival (ToA). Uncorrelated ambient photons and dark counts are averaged out, leaving only their associated shot noise impacting the phase precision. The QVGA camera allows capturing depth-sense images with sub-cm precision over 6-m range of detection, even with a small PDE of 0.7% at 850-nm wavelength.