The formation of hydrogen blisters in the fabrication of tunnelling oxide passivating contact (TOPCon) solar cells critically degrades passivation. In this study, we investigated the formation mechanism of blisters during the fabrication of TOPCons for crystalline silicon solar cells and the suppression of such blisters. We tested the effects of annealing temperature and duration, surface roughness, and deposition temperature on the blister formation, which was suppressed in two ways. First, TOPCon fabrication on a rough surface enhanced adhesion force, resulting in reduced blister formation after thermal annealing. Second, deposition or annealing at higher temperatures resulted in the reduction of hydrogen in the film. A sample fabricated through low-pressure chemical vapor deposition at 580 °C was free from silicon–hydrogen bonds and blisters after the TOPCon structure was annealed. Remarkably, samples after plasma-enhanced chemical vapor deposition at 300, 370, and 450 °C were already blistered in the as-deposited state, despite low hydrogen contents. Analysis of the hydrogen incorporation, microstructure, and deposition mechanism indicate that in plasma-enhanced chemical vapor deposition (PECVD) deposition, although the increase of substrate temperature reduces the hydrogen content, it risks the increase of porosity and molecular-hydrogen trapping, resulting in even more severe blistering.

As a novel route to construct fine and abnormally high-aspect-ratio electrodes with excellent adhesion and reduced contact resistivity on a textured surface, an electrostatic-force-assisted dispensing printing technique is reported and compared with conventional dispensing and electrohydrodynamic jet printing techniques. The electrostatic force applied between a silver paste and the textured surface of a crystalline silicon solar cell wafer significantly improves the physical adhesion of the electrodes, whereas those fabricated using a conventional dispensing printing technique peel off with a silver paste containing 2 wt% of a fluorosurfactant. Moreover, the contact resistivity and dimensionless deviation of total resistance are significantly reduced from 2.19 ± 1.53 mΩ·cm² to 0.98 ± 0.92 mΩ·cm² and from 0.10 to 0.03, respectively. By utilizing electrodes with an abnormally high-aspect-ratio of 0.79 (the measured thickness and width are 30.4 μm and 38.3 μm, respectively), the cell efficiency is 17.2% on a polycrystalline silicon solar cell with an emitter sheet resistance of 60 Ω/sq. This cell efficiency is considerably higher than previously reported values obtained using a conventional electrohydrodynamic jet printing technique, by +0.48–3.5%p.

Since the temperature of a photovoltaic (PV) module is not consistent as it was estimated at a standard test condition, the thermal stability of the solar cell parameters determines the temperature dependence of the PV module. Fill factor loss analysis of crystalline silicon solar cell is one of the most efficient methods to diagnose the dominant problem, accurately. In this study, the fill factor analysis method and the double-diode model of a solar cell was applied to analyze the effect of J₀₁, J₀₂, R_s, and R_sh on the fill factor in details. The temperature dependence of the parameters was compared through the passivated emitter rear cell (PERC) of the industrial scale solar cells. As a result of analysis, PERC cells showed different temperature dependence for the fill factor loss of the J₀₁ and J₀₂ as temperatures rose. In addition, we confirmed that fill factor loss from the J₀₁ and J₀₂ at elevated temperature depends on the initial state of the solar cells. The verification of the fill factor loss analysis was conducted by comparing to the fitting results of the injection dependent-carrier lifetime.

In the potential induced degradation (PID) phenomenon, the output power of a photovoltaic (PV) module decreases due to the high potential difference between the PV system and the ground. This voltage forcefully moves the positive charge in the module to the surface of the solar cell. The accumulated charge leads to the performance deterioration of the module, namely, PID of the module. We conducted a study to accurately predict the output reduction of the module operating in various installation conditions coming from the PID phenomenon. We investigated the leakage current flowing through front glass laminated with encapsulation material simultaneously exposed to various performance conditions of the PV system, namely, relative humidity, temperature, and applied voltage, which have an important effect on the PID of the module. The degradation of the module coming from PID was calculated on the basis of the obtained leakage current. To confirm the calculated data, modules with one solar cell were manufactured and the power loss results of the modules' exposure to various PID generation experiments were compared with the expected results. The results showed that we could predict the degradation of the modules by PID within a 2% tolerance under the PV system installation conditions.