Bypass diodes have been widely utilized in crystalline silicon (c-Si) photovoltaic (PV) modules to maximize the output of a PV module array under partially shaded conditions. A Schottky diode is used as the bypass diode in c-Si PV modules due to its low operating voltage. In this work, we systematically investigated the origin of bypass diode faults in c-Si PV modules operated outdoors. The temperature of the inner junction box where the bypass diode is installed increases as the ambient temperature increases. Its temperature rises to over 70 °C on sunny days in summer. As the temperature of the junction box increases from 25 to 70 °C, the leakage current increases up to 35 times under a reverse voltage of 15 V. As a result of the high leakage current of the bypass diode at high temperature, melt down of the junction barrier between the metal and semiconductor has been observed in damaged diodes collected from abnormally functioning PV modules. Thus, it is believed that the constant leakage current applied to the junction caused the melting of the junction, thereby resulting in a failure of both the bypass diode and the c-Si PV module.

We present electrowinning of silver (Ag) from crystalline silicon (c-Si) solar cells using a solution of methanesulfonic acid (MSA) as the electrolyte. Ag dissolved effectively in MSA because of its high solubility in MSA; however, the electrochemical recovery of Ag from MSA solutions was found to be inefficient because of the low mobility of Ag ions in MSA, owing to its high viscosity. Therefore, we decreased the viscosity of MSA by adding deionized (DI) water, as a possible method for enhancing the mobility of Ag ions. The concentrations of added DI water were 0, 1.1, 5.0, 9.3, and 20.8 M, respectively. Further, we performed cyclic voltammetry for each solution to calculate the diffusion coefficient using the Randles–Sevcik equation, and analyzed the viscosity of MSA solutions depending on the concentration of added water using a rheometer. The morphologies of the electrochemically recovered Ag particles changed with variations in the amount of the added water, from branch-like structures to dendritic structures with a decreasing size. Moreover, the cathodic current efficiency increased considerably with increasing concentration of the added DI water. Finally, we recovered Ag with >99.9% (3N) purity from c-Si solar cells by electrowinning, as determined by glow discharge mass spectrometry.

In the potential induced degradation (PID) phenomenon, the output power of a photovoltaic (PV) module decreases due to the high potential difference between the PV system and the ground. This voltage forcefully moves the positive charge in the module to the surface of the solar cell. The accumulated charge leads to the performance deterioration of the module, namely, PID of the module. We conducted a study to accurately predict the output reduction of the module operating in various installation conditions coming from the PID phenomenon. We investigated the leakage current flowing through front glass laminated with encapsulation material simultaneously exposed to various performance conditions of the PV system, namely, relative humidity, temperature, and applied voltage, which have an important effect on the PID of the module. The degradation of the module coming from PID was calculated on the basis of the obtained leakage current. To confirm the calculated data, modules with one solar cell were manufactured and the power loss results of the modules' exposure to various PID generation experiments were compared with the expected results. The results showed that we could predict the degradation of the modules by PID within a 2% tolerance under the PV system installation conditions.

The silicon wafers for solar cells on which the paste is deposited experience a bowing phenomenon. The thickness of commonly used c-Si wafers is 180 μm or more. When fabricating c-Si solar cells with this wafer thickness, the bowing value is 3 mm or less and the problem does not occur. However, for the thin c-Si solar cells which are being studied recently, the output reduction due to failure during manufacture and cracking are attributed to bowing. In generally, it is known that the bowing phenomenon arises mainly from the paste applied to the back side electrode of c-Si solar cells and the effects of SiNx (silicon nitride) and the paste on the front side are not considered significant. The bowing phenomenon is caused by a difference in the coefficient of expansion between heterogeneous materials, there is the effect of bowing on the front electrode and ARC. In this paper, a partially processed c-Si solar cell was fabricated and a bowing phenomenon variation according to the wafer thicknesses was confirmed. As a result of the experiment, the measured bow value after the firing process suggests that the paste on the front-side indicates a direction different from that of the back-side paste. The bow value increases when Al paste is deposited on SiNx. The fabricated c-Si solar cell was analyzed on basis of the correlation between the bowing phenomenon of the materials and the c-Si wafer using Stoney’s equation, which is capable of analyzing the relationship between bowing and stress. As a result, the bowing phenomenon of the c-Si solar cell estimated through the experiment that the back side electrode is the important element, but also the front electrode and ARC influence the bowing phenomenon when fabricating c-Si solar cells using thin c-Si wafers.