Exceptional advancement has been made in the development of graphene optical nanoantennas. They are incorporated with optoelectronic devices for plasmonics application and have been an active research area across the globe. The interest in graphene plasmonic devices is driven by the different applications they have empowered, such as ultrafast nanodevices, photodetection, energy harvesting, biosensing, biomedical imaging and high-speed terahertz communications. In this article, the aim is to provide a detailed review of the essential explanation behind graphene nanoantennas experimental proofs for the developments of graphene-based plasmonics antennas, achieving enhanced light–matter interaction by exploiting graphene material conductivity and optical properties. First, the fundamental graphene nanoantennas and their tunable resonant behavior over THz frequencies are summarized. Furthermore, incorporating graphene–metal hybrid antennas with optoelectronic devices can prompt the acknowledgment of multi-platforms for photonics. More interestingly, various technical methods are critically studied for frequency tuning and active modulation of optical characteristics, through in situ modulations by applying an external electric field. Second, the various methods for radiation beam scanning and beam reconfigurability are discussed through reflectarray and leaky-wave graphene antennas. In particular, numerous graphene antenna photodetectors and graphene rectennas for energy harvesting are studied by giving a critical evaluation of antenna performances, enhanced photodetection, energy conversion efficiency and the significant problems that remain to be addressed. Finally, the potential developments in the synthesis of graphene material and technological methods involved in the fabrication of graphene–metal nanoantennas are discussed.

Graphene as a material for optoelectronic design applications has been significantly restricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques. The UV/vis spectroscopic analysis confirmed the narrowness of the optical bandgap from 3.4 to 3.1, 2.5, and 2.2 eV in N-rGO samples, where N-rGO samples were synthesized with a nitrogen doping concentration of 2.80, 4.53, and 5.51 at.%. Besides, an enhanced n-type electrical conductivity in N-rGO was observed in Hall effect measurement. The observed tunable optoelectrical characteristics of N-rGO make it a suitable material for developing future optoelectronic devices at the nanoscale.

Graphene and its hybrids are being employed as potential materials in light-sensing devices due to their high optical and electronic properties. However, the absence of a bandgap in graphene limits the realization of devices with high performance. In this work, a boron-doped reduced graphene oxide (B-rGO) is proposed to overcome the above problems. Boron doping enhances the conductivity of graphene oxide and creates several defect sites during the reduction process, which can play a vital role in achieving high-sensing performance of light-sensing devices. Initially, the B-rGO is synthesized using a modified microwave-assisted hydrothermal method and later analyzed using standard FESEM, FTIR, XPS, Raman, and XRD techniques. The content of boron in doped rGO was found to be 6.51 at.%. The B-rGO showed a tunable optical bandgap from 2.91 to 3.05 eV in the visible spectrum with an electrical conductivity of 0.816 S/cm. The optical constants obtained from UV-Vis absorption spectra suggested an enhanced surface plasmon resonance (SPR) response for B-rGO in the theoretical study, which was further verified by experimental investigations. The B-rGO with tunable bandgap and enhanced SPR could open up the solution for future high-performance optoelectronic and sensing applications.

Adulteration of meat products is a delicate issue for people around the globe. The mixing of lard in meat causes a significant problem for end users who are sensitive to halal meat consumption. Due to the highly similar lipid profiles of meat species, the identification of adulteration becomes more difficult. Therefore, a comprehensive spectral detailing of meat species is required, which can boost the adulteration detection process. The experiment was conducted by distributing samples labeled as “Pure (80 samples)” and “Adulterated (90 samples)”. Lard was mixed with the ratio of 10–50% v/v with beef, lamb, and chicken samples to obtain adulterated samples. Functional groups were discovered for pure pork, and two regions of difference (RoD) at wavenumbers 1700–1800 cm⁻¹ and 2800–3000 cm⁻¹ were identified using absorbance values from the FTIR spectrum for all samples. The principal component analysis (PCA) described the studied adulteration using three principal components with an explained variance of 97.31%. The multiclass support vector machine (M-SVM) was trained to identify the sample class values as pure and adulterated clusters. The acquired overall classification accuracy for a cluster of pure samples was 81.25%, whereas when the adulteration ratio was above 10%, 71.21% overall accuracy was achieved for a group of adulterated samples. Beef and lamb samples for both adulterated and pure classes had the highest classification accuracy value of 85%, whereas chicken had the lowest value of 78% for each category. This paper introduces a comprehensive spectrum analysis for pure and adulterated samples of beef, chicken, lamb, and lard. Moreover, we present a rapid M-SVM model for an accurate classification of lard adulteration in different samples despite its low-level presence.

In recent years, the field of nanophotonics has progressively developed. However, constant demand for the development of new light source still exists at the nanometric scale. Light emissions from graphene-based active materials can provide a leading platform for the development of two dimensional (2-D), flexible, thin, and robust light-emitting sources. The exceptional structure of Dirac’s electrons in graphene, massless fermions, and the linear dispersion relationship with ultra-wideband plasmon and tunable surface polarities allows numerous applications in optoelectronics and plasmonics. In this article, we present a comprehensive review of recent developments in graphene-based light-emitting devices. Light emissions from graphene-based devices have been evaluated with different aspects, such as thermal emission, electroluminescence, and plasmons assisted emission. Theoretical investigations, along with experimental demonstration in the development of graphene-based light-emitting devices, have also been reviewed and discussed. Moreover, the graphene-based light-emitting devices are also addressed from the perspective of future applications, such as optical modulators, optical interconnects, and optical sensing. Finally, this review provides a comprehensive discussion on current technological issues and challenges related to the potential applications of emerging graphene-based light-emitting devices.

This work describes the fabrication and characterization of a Micro-Electro-Mechanical System (MEMS) sensor for gas sensing applications. The sensor is based on standard PolyMUMPs (Polysilicon Multi-Users MEMS Process) technology to control the temperature over the sensing layer. Due to its compact size and low power consumption, micro-structures enable a well-designed gas-sensing-layer interaction, resulting in higher sensitivity compared to the ordinary materials. The aim of conducting the characterization is to compare the measured and calculated resistance values of the micro-heater and the temperature sensor. The temperature coefficient of resistance (TCR) of the temperature sensor has been estimated by raising and dropping the temperature throughout a 25–110 °C range. The sensitivity of these sensors is dependent on the TCR value. The temperature sensor resistance was observed to rise alongside the rising environmental temperatures or increasing voltages given to the micro-heater, with a correlation value of 0.99. When compared to the TCR reported in the literature for the gold material 0.0034 °C${}^{-1}$, the average TCR was determined to be 0.00325 °C${}^{-1}$ and 0.0035 °C${}^{-1}$, respectively, indicating inaccuracies of 4.6% and 2.9%, respectively. The variation between observed and reported values is assumed to be caused by the fabrication tolerances of the design dimensions or material characteristics.