Films of α-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) were irradiated with protons at energies of 330, 400, and 460 keV with fluences 6 × 1015 cm−2 and with 7 MeV C4+ ions with a fluence of 1.3 × 1013 cm−2 and characterized by a suite of measurements, including Photoinduced Transient Current Spectroscopy (PICTS), Thermally Stimulated Current (TSC), Microcathodoluminescence (MCL), Capacitance–frequency (C–f), photocapacitance and Admittance Spectroscopy (AS), as well as by Positron Annihilation Spectroscopy (PAS). Proton irradiation creates a conducting layer near the peak of the ion distribution and vacancy defects distribution and introduces deep traps at Ec-0.25, 0.8, and 1.4 eV associated with Ga interstitials, gallium–oxygen divacancies VGa–VO, and oxygen vacancies VO. Similar defects were observed in C implanted samples. The PAS results can also be interpreted by assuming that the observed changes are due to the introduction of VGa and VGa–VO.

The influence of surface roughness on its high temperature oxidation for an Ni-base superalloy was studied using laser profilometry, atomic force microscopy, mass change measurements, glow-discharge optical emission spectrometry, scanning electron microscopy, X-ray diffraction, and positron annihilation methods. The isothermal and cyclic air oxidation tests were performed at 1000 °C and showed dependence of oxidation behavior on surface roughness. Smoother surfaces oxidation resulted in the formation of a multilayered oxide scale consisting of NiO, Cr₂O₃, and internally oxidized Al₂O₃ while a rougher surface formed protective Al₂O₃ scale. The factors responsible for different oxidation behaviors were determined as higher concentration of vacancies and increased residual stresses in the near-surface region of studied alloys.

Radiation damage is one of the significant factors limiting the operating time of many structural materials working under extreme conditions. One of the promising directions in the development of materials that are resistant to radiation damage and have improved physical and mechanical properties is the creation of nanoscale multilayer coatings (NMCs). The paper is devoted to the experimental comprehension of changes in the defect structure and mechanical properties of nanoscale multilayer coatings (NMCs) with alternating layers of Zr and Nb under irradiation. Series of Zr/Nb NMCs with different thicknesses of individual layers were fabricated by magnetron sputtering and subjected to H+ irradiation. The evolution of structure and phase states, as well as the defect state under proton irradiation, was studied using the methods of high-resolution transmission electron microscopy (HRTEM), X-ray diffraction analysis (XRD), glow discharge optical emission spectroscopy (GDOES), and positron annihilation spectroscopy (PAS). The layer-by-layer analysis of structural defects was carried out by Doppler broadening spectroscopy (DBS) using a variable-energy positron beam. To estimate the binding energy and the energy paths for the hydrogen diffusion in Zr/Nb NMCs, calculations from the first principles were used. When the thickness of individual layers is less than 25 nm, irradiation causes destruction of the interfaces, but there is no significant increase in the defect level, the S parameter (open volume defects amount) before and after irradiation is practically unchanged. After irradiation of NMC Zr/Nb with a thickness of layers 50 and 100 nm, the initial microstructure is retained, and the S parameter is significantly reduced. The GDOES data reveal the irregular H accumulation at the interface caused by significant differences in H diffusion barriers in the bulk of Zr and Nb multilayers as well as near the interface’s region.

The spatial distribution of positrons emitted from radioactive isotopes into stacks or layered samples is a subject of the presented report. It was found that Monte Carlo (MC) simulations using GEANT4 code are not able to describe correctly the experimental data of the positron fractions in stacks. The mathematical model was proposed for calculations of the implantation profile or positron fractions in separated layers or foils being components of a stack. The model takes into account only two processes, i.e., the positron absorption and backscattering at interfaces. The mathematical formulas were applied in the computer program called LYS-1 (layers profile analysis). The theoretical predictions of the model were in the good agreement with the results of the MC simulations for the semi infinite sample. The experimental verifications of the model were performed on the symmetrical and non-symmetrical stacks of different foils. The good agreement between the experimental and calculated fractions of positrons in components of a stack was achieved. Also the experimental implantation profile obtained using the depth scanning of positron implantation technique is very well described by the theoretical profile obtained within the proposed model. The LYS-1 program allows us also to calculate the fraction of positrons which annihilate in the source, which can be useful in the positron spectroscopy.