An ultra-fast physical random number generator is demonstrated utilizing a photonic integrated device based broadband chaotic source with a simple post data processing method. The compact chaotic source is implemented by using a monolithic integrated dual-mode amplified feedback laser (AFL) with self-injection, where a robust chaotic signal with RF frequency coverage of above 50 GHz and flatness of ±3.6 dB is generated. By using 4-least significant bits (LSBs) retaining from the 8-bit digitization of the chaotic waveform, random sequences with a bit-rate up to 640 Gbit/s (160 GS/s × 4 bits) are realized. The generated random bits have passed each of the fifteen NIST statistics tests (NIST SP800-22), indicating its randomness for practical applications.

An eight-channel monolithically integrated complex-coupled distributed-feedback laser array based on sampled gratings has been designed and fabricated. Selective lasing at different wavelengths is obtained. The frequency separation between each adjacent channel is about 200 GHz. The typical threshold current is between 30 and 40 mA. The optical output power of each channel is about 10 mW at an injection current of 100 mA. The continuous tuning of emission wavelength with injected currents is also demonstrated.

We experimentally demonstrate a compact, long-range, high-resolution chaotic correlation optical time-domain reflectometry based on a monolithic integrated chaotic laser (MICL). The MICL can directly generate a broadband chaotic signal covering a RF frequency range of over 40 GHz. Multi-reflection events can be precisely located in a detection range of $\sim 47\mathrm{km}$ with a range-independent resolution of 2.6 mm.

We report a high speed directly modulated widely tunable dual wavelength distributed feedback (DFB) laser for THz communication application. The wavelength separation between the two modes can be thermally tuned between 96 GHz and 1510 GHz. The device can be directly modulated by high speed data at up to 25 Gb/s data rate, which facilitates high speed data modulation in a THz communication system. The device emits at 1.3 μm wavelength, which helps to increase the transmission distance of high-speed baseband data in fibers and lowers the request for wavelength tuning range to obtain the same THz frequency when compared with 1.5 μm wavelength devices. The presented results show that our dual wavelength device is promising for future low cost and high capacity THz communication system.

Modulation bandwidth enhancement of directly modulated semiconductor lasers (DMLs) has attracted broad interest to accommodate the tremendously growing demand for network traffic. In this paper, a monolithically integrated mutually coupled (IMC) laser for the O-band is demonstrated both numerically and experimentally. The direct modulation bandwidth was enhanced utilizing a photon–photon resonance (PPR) effect based on the mutual injection-locking technique. The IMC laser consisted of two distributed feedback (DFB) laser sections with a semiconductor optical amplifier (SOA) section in between. The relationship between the PPR frequency and SOA length was analyzed numerically to achieve a flat modulation response by optimizing the SOA length. Then, an enhanced 3-dB bandwidth of 38.7 GHz was realized experimentally, a nearly threefold enhancement over the modulation bandwidth of a solitary DFB laser at the same bias. Moreover, clear open eyes up to 40 Gb/s transmission over a 25-km single-mode fiber were achieved. Although the dynamic extinction ratio of the eye diagram was 1.1 dB, it can be further improved by increasing the mutual injection locking range of the IMC laser.

We have fabricated $1.3~\mu \text{m}$ band InP based high speed directly modulated distributed feedback (DFB) lasers having passive distributed Bragg reflector (DBR). Because of the feed back from the DBR section, the modulation bandwidth of the lasers is over 25 GHz, which is notably larger than the 19 GHz for a normal single section DFB laser. The reflector of the devices has the same multi-quantum wells (MQWs) as the DFB section, which simplifies the device fabrication greatly, helping to lower the device cost. For the DBR integrated DFB lasers, experimental results show that a larger modulation current efficiency can be obtained when the DFB wavelength is more positively detuned relative to the reflection peak of the DBR reflector. This indicates that a static detune between the DFB wavelength and the DBR reflection peak can be introduced into a distributed reflector laser to get a good detune condition, helping to lower the device cost of high speed directly modulated lasers.