We have fabricated $1.3~\mu \text{m}$ band InP based high speed directly modulated distributed feedback (DFB) lasers having passive distributed Bragg reflector (DBR). Because of the feed back from the DBR section, the modulation bandwidth of the lasers is over 25 GHz, which is notably larger than the 19 GHz for a normal single section DFB laser. The reflector of the devices has the same multi-quantum wells (MQWs) as the DFB section, which simplifies the device fabrication greatly, helping to lower the device cost. For the DBR integrated DFB lasers, experimental results show that a larger modulation current efficiency can be obtained when the DFB wavelength is more positively detuned relative to the reflection peak of the DBR reflector. This indicates that a static detune between the DFB wavelength and the DBR reflection peak can be introduced into a distributed reflector laser to get a good detune condition, helping to lower the device cost of high speed directly modulated lasers.

We report data transmissions using a packaged two-section distributed Bragg reflector (DBR) laser which has InGaAlAs multi-quantum wells (MQWs) as the gain material. The tunable DBR laser has a wavelength tuning range of 11.44 nm. The DBR laser has uniform 3-dB direct modulation bandwidth (over 12GHz) within the over 11 nm wavelength tuning range. 10 Gb/s data transmissions are performed at up to 25-km distance and different wavelength emissions at 25 °C and 50 °C.

We report an electro-absorption modulator integrated with a distributed feedback Bragg laser fabricated by butt-joint technology. The lasing wavelength of the EML laser was 1311.71 nm, the output power was 10.04 mW when the current of the DFB section was 100 mA, the side-mode suppression ratio was greater than 50 dB, and the small-signal bandwidth was 29.40 GHz when the bias voltage of the modulator was −2 V. A 50 Gb/s data transmission over a single-mode fiber of up to 10 km was realized, which could be used as a light source for 50 G passive optical network systems.

A wavelength-tunable chaotic optical signal generation and on-chip O/E conversion scheme based on an integrated laser-photodiode chip subject to filtered optical feedback is proposed and experimentally demonstrated. The integrated chip consists of a Fabry-Perot (FP) gain section and a photodiode, which was fabricated on an n-InP substrate with the same active material. By applying a filtered feedback signal to the FP gain section, wavelength-tunable chaotic carrier ranging from 1576 to 1587 nm was achieved. On-chip microwave chaotic signal generation with a standard bandwidth over 5.5 GHz was obtained using the integrated photonic chip.