CrAlYN coatings with different aluminum (4–12 at.%) and yttrium (2–5 at.%) contents are deposited by d.c. reactive magnetron sputtering on silicon and M2 steel substrates using metallic targets and Ar/N2 mixtures. The influence of the nanostructure and chemical elemental distribution on the oxidation resistance after heating in air at 1000 °C is studied by means of cross-sectional scanning electron microscopy (X-SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction (XRD) and glow discharge optical emission spectroscopy (GD-OES). The sequential exposure to the metallic targets during the synthesis leads to a multilayer structure where concentration of metallic elements (Cr, Al and Y) is changing periodically. A good oxidation resistance is observed when Al- and Y-rich regions are separated by well-defined CrN layers, maintaining crystalline coherence along the columnar structure. This protective behavior is independent of the type of substrate and corresponds to the formation of a thin mixed (Al, Cr)-oxide scale that protects the film underneath. The GD-OES and XRD analysis have demonstrated that Y acts as a reactive element, blocking the Fe and C atoms diffusion from the steel and favoring higher Al/Cr ratio in the passivation layer after heating. The coating with Y content around 4 at.% exhibited the best performance with a thinner oxide scale, a delay in the CrN decomposition and transformation to Cr2N, and a more effective Fe and C blocking.Peer reviewe

Considering that two-dimensional (2D) molybdenum trioxide has acquired more attention in the last few years, it is relevant to speed up thickness identification of this material. We provide two fast and non-destructive methods to evaluate the thickness of MoO₃ flakes on SiO₂/Si substrates. First, by means of quantitative analysis of the apparent color of the flakes in optical microscopy images, one can make a first approximation of the thickness with an uncertainty of ±3 nm. The second method is based on the fit of optical contrast spectra, acquired with micro-reflectance measurements, to a Fresnel law-based model that provides an accurate measurement of the flake thickness with ±2 nm of uncertainty.

Two-dimensional transition metal dichalcogenide semiconductors have emerged as promising candidates for optoelectronic devices with unprecedented properties and ultra-compact footprints. However, the high sensitivity of atomically thin materials to the surrounding dielectric media imposes severe limitations on their practical applicability. Hence, to enable the effective integration of these materials in devices, the development of reliable encapsulation procedures that preserve their physical properties is required. Here, the excitonic photoluminescence (at room temperature and 10 K) is assessed on mechanically exfoliated WSe₂ monolayer flakes encapsulated with SiO_x and Al_xO_y layers by means of chemical and physical deposition techniques. Conformal coating on untreated and nonfunctionalized flakes is successfully achieved by all the techniques examined, with the exception of atomic layer deposition, for which a cluster-like oxide coating is formed. No significant compositional or strain state changes in the flakes are detected upon encapsulation, independently of the technique adopted. Remarkably, our results show that the optical emission of the flakes is strongly influenced by the stoichiometry quality of the encapsulating oxide. When the encapsulation is carried out with slightly sub-stoichiometric oxides, two remarkable phenomena are observed. First, dominant trion (charged exciton) photoluminescence is detected at room temperature, revealing a clear electrical doping of the monolayers. Second, a strong decrease in the optical emission of the monolayers is observed, and attributed to non-radiative recombination processes and/or carrier transfer from the flake to the oxide. Power- and temperature-dependent photoluminescence measurements further confirm that stoichiometric oxides obtained by physical deposition lead to a successful encapsulation, opening a promising route for the development of integrated two-dimensional devices.

The development of broadband and ultracompact optoelectronic devices relies on the possibility of fabricating bright and tunable emitters at the nanoscale. Here, we show emission from EuO_x (1 ≤ x < 1.4) thin films on silicon formed by nanocrystals with average sizes in the range of 5 nm. The photoluminescence emission of the nano-EuO_x films is tunable as a function of the oxygen concentration changing from a green broadband Eu²⁺-related emission to a narrow red Eu³⁺-related emission. To reach these results has been instrumental through the use of a new methodology specially designed to achieve high-quality europium oxide films whose compositional properties are controlled by the growth base pressure and preserved thanks to a chemically stable and transparent cover layer of Al₂O₃. Our findings confirm the outstanding potential of nanostructured EuO_x films as “one-compound” optical elements with tunable emission properties for their implementation in integrated silicon-based devices.