Silver (Ag) nanoparticles were successfully prepared by using the in-liquid pulsed plasma technique. This method is based on a low voltage, pulsed spark discharge in a dielectric liquid. We explore the effect of the protecting ligands, specifically Cetyl Trimethylammonium Bromide (CTAB), Polyvinylpyrrolidone (PVP), and Sodium n-Dodecyl Sulphate (SDS), used as surfactant materials to prevent nanoparticle aggregation. The X-Ray Diffraction (XRD) patterns of the samples confirm the face-centered cubic crystalline structure of Ag nanoparticles with the presence of Ag₂O skin. Scanning Transmission Electron Microscopy (STEM) reveals that spherically shaped Ag nanoparticles with a diameter of 2.2 ± 0.8 nm were synthesised in aqueous solution with PVP surfactant. Similarly, silver nanoparticles with a peak diameter of 1.9 ± 0.4 nm were obtained with SDS surfactant. A broad size distribution was found in the case of CTAB surfactant.

The morphologies and microstructures of Au-catalyzed InGaAs nanowires (NWs) prepared by a two-step solid-source chemical vapor deposition (CVD) method were systematically investigated using scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The detailed structural characterization and statistical analysis reveal that two specific morphologies are dominant in InGaAs NWs, a zigzag surface morphology and a smooth surface morphology. The zigzag morphology results from the periodic existence of twining structures, and the smooth morphology results from a lack of twining structures. HRTEM images and energy-dispersive X-ray spectroscopy (EDX) indicate that the catalyst heads have two structures, Au₄In and AuIn₂, which produce InGaAs NWs in a cubic phase crystalline form. The growth mechanism of the InGaAs NWs begins with Au nanoparticles melting into small spheres. In atoms are diffused into the Au spheres to form an Au-In alloy. When the concentration of In inside the alloy reaches its saturation point, the In precipitate reacts with Ga and As atoms to form InGaAs at the interface between the catalyst and substrate. Once the InGaAs compound forms, additional precipitation and reactions only occur at the interface of the InGaAs and the catalyst. These results provide a fundamental understanding of the InGaAs NW growth process which is critical to the formation of high-quality InGaAs NWs for various device applications.