We propose a three-terminal ring-type device which contains a single-level quantum dot (QD) to extract or separate the spin-up and the spin-down electrons that are injected into the QD from a middle lead, into the left and the right leads, respectively. This scheme is based on the Rashba spin-orbit interaction (RSOI) in the bridge between the left and the right leads and is free from magnetic field or magnetic material. We find that both the spin directions and the magnitude of the outflow currents in the left and the right leads can be tuned by the RSOI strength and the structure parameters.

The traditional driving waveform of the electrowetting display (EWD) has many disadvantages, such as the large oscillation of the target grayscale aperture ratio and a long time for achieving grayscale. Therefore, a driving waveform based on the exponential function was proposed in this study. First, the maximum driving voltage value of 30 V was obtained by testing the hysteresis curve of the EWD pixel unit. Secondly, the influence of the time constant on the driving waveform was analyzed, and the optimal time constant of the exponential function was designed by testing the performance of the aperture ratio. Lastly, an EWD panel was used to test the driving effect of the exponential-function-driving waveform. The experimental results showed that a stable grayscale and a short driving time could be realized when the appropriate time constant value was designed for driving EWDs. The aperture ratio oscillation range of the gray scale could be reduced within 0.95%, and the driving time of a stable grayscale was reduced by 30% compared with the traditional driving waveform.

The spin thermoelectric effects are studied in a Rashba double quantum dot (QD) attached to ferromagnetic leads with noncollinear magnetic moments. The spin conductance G(s), spin thermopower S-s, electron thermal conductance kappa(el) and spin thermoelectric figure of merit Z(s)T are calculated by using Green's function method. We find that the magnitude of the spin figure of merit can be remarkably enhanced by the coexistence of the Rashba spin-orbit interaction in the QDs and the leads' spin polarization, and can reach even as high as 3 by optimizing the parameters of the structure. The angle between the leads' magnetic moments can act as a powerful means to manipulate the properties of the spin figure of merit.

In MoS₂ field-effect transistors, the current or voltage fluctuations related to either mobility- or number-dependent relationships are characterized by low-frequency noise. This noise can typically be used to evaluate the application limits of MoS₂-based electronic devices. In this work, the low-frequency noise characteristics of single-crystal bilayer MoS₂ grown by chemical vapor deposition (CVD) are systematically investigated and found to offer significant performance improvements compared with those based on the monolayer MoS₂ channel. At f = 100 Hz, the normalized drain current power spectral density (S_I/I_d²) is 2.4 × 10⁻¹⁰Hz⁻¹ and 3.1 × 10⁻⁹Hz⁻¹ for bilayer and monolayer MoS₂ transistors, respectively. The 1/f noise behavior can be accurately described by McWhorter's carrier number fluctuation model for both transistor types, suggesting that carrier trapping and de-trapping by dielectric defects is the dominant mechanism of 1/f noise in CVD MoS₂ transistors. Furthermore, a minimal WLS_I/I_d² of 3.1 × 10⁻¹⁰ μm²/Hz (where W is the gate width and L is the gate length) is achieved at V_bg = 3 V by effectively reducing the contact resistance of bilayer MoS₂ transistors using a back-gate voltage. These results demonstrate that CVD bilayer MoS₂ is a promising candidate for future large-scale 2D-semiconductor-based electronic applications with improved noise performance.