The interlayer (IL) plays a vital role in hybrid white organic light-emitting diodes (WOLEDs); however, only a negligible amount of attention has been given to n-type ILs. Herein, the n-type IL, for the first time, has been demonstrated to achieve a high efficiency, high color rendering index (CRI), and low voltage trade-off. The device exhibits a maximum total efficiency of 41.5 lm W⁻¹, the highest among hybrid WOLEDs with n-type ILs. In addition, high CRIs (80–88) at practical luminances (≥1000 cd m⁻²) have been obtained, satisfying the demand for indoor lighting. Remarkably, a CRI of 88 is the highest among hybrid WOLEDs. Moreover, the device exhibits low voltages, with a turn-on voltage of only 2.5 V (>1 cd m⁻²), which is the lowest among hybrid WOLEDs. The intrinsic working mechanism of the device has also been explored; in particular, the role of n-type ILs in regulating the distribution of charges and excitons has been unveiled. The findings demonstrate that the introduction of n-type ILs is effective in developing high-performance hybrid WOLEDs. Open image in new window

Rhenium disulfide (ReS₂) has drawn much scientific interest as it possesses many distinctive features due to its unusual structure. However, the synthesis of large-area continuous ReS₂ films with high crystalline quality is still a challenge to date. Here, chemical vapor deposition (CVD) of the substrate-scale continuous ReS₂ film with an atomic thickness and spatial uniformity, as well as its thickness-dependent optoelectronic properties, was reported. By using a space-confined CVD configuration, the ReS₂ film on mica with the thickness varying from the monolayer to few layers can be accurately tuned via changing the position of the substrate. HRTEM and AFM images revealed that the grain size of the ReS₂ film is on the scale of tens of nanometers. Field effect transistors based on the ReS₂ thin film exhibited a high photoresponsivity of 278 mA/W under 405 nm illumination. A decrease in bandgap energy from 1.59 eV in the monolayer to 1.50 eV in bulk and the absorption coefficient as large as 10⁵ × cm⁻¹ in the visible range were found for the ReS₂ thin film, suggesting great potential of using ReS₂ as an absorber material for photovoltaic application.

A photovoltaic photodetector based on a hybrid dimensional WSe₂/WS₂/p-Si dual-vdW heterojunction is constructed, which can realize the coupling of the photovoltaic effect and photogating effect.