Graphene-decorated V₂O₅ nanobelts (GVNBs) were synthesized via a low-temperature hydrothermal method in a single step. V₂O₅ nanobelts (VNBs) were formed in the presence of graphene oxide, a mild oxidant, which also enhanced the conductivity of GVNBs. From the electron energy loss spectroscopy analysis, the reduced graphene oxide (rGO) are inserted into the layered crystal structure of V₂O₅ nanobelts, which further confirmed the enhanced conductivity of the nanobelts. The electrochemical energy-storage capacity of GVNBs was investigated for supercapacitor applications. The specific capacitance of GVNBs was evaluated using cyclic voltammetry (CV) and charge/discharge (CD) studies. The GVNBs having V₂O₅-rich composite, namely, V₃G₁ (VO/GO = 3:1), showed superior specific capacitance in comparison to the other composites (V₁G₁ and V₁G₃) and the pure materials. Moreover, the V₃G₁ composite showed excellent cyclic stability and the capacitance retention of about 82% was observed even after 5000 cycles.

The island-like distribution of the oxygen functional groups of graphene oxide was identified by deposition of TiO₂ on the graphene oxide surface using low-temperature atomic layer deposition.

Ultra-sensitive RGO gas sensors with a facile preparation method are presented. The gas sensor composed of RGO nanofibers showed excellent sensitivity to NO ₂ gas.

This study investigated the transport properties of single-layer reduced graphene oxides (rGOs). The rGOs were prepared by the bubble deposition method followed by thermal reduction. The crossover of the transport mechanism from Efros-Shklovskii (ES) variable range hopping (VRH) between the localized states to Mott-VRH was observed near 70 K using the temperature-dependent conductance. The ES-VRH conduction below 70 K is apparent in the electric field dependence of the field-driven hopping transport in the high-electric field regime. We also figure out that the thermoelectric power is consistent with the 2D Mott VRH above 70 K. We argue that the VRH conduction results from the topological disorders of rGO as confirmed by Raman spectroscopy. This infers that the average distance between defects is approximately 2.0 nm.