Perovskite solar cells (PSCs) have drawn significant consideration as a competing solar cell technology because of the drastic advance in their power conversion efficiency (PCE) over the last two decades. The interfaces between the electron transport layer (ETL) and the absorber layer and between the absorber layer and the hole transport layer (HTL) have a major impact on the performance of the PSCs. In this paper, we have investigated the defect interfaces between ETL/absorber layer and absorber layer/HTL of calibrated experimental CH ₃ NH ₃ PbX ₃ lead-based and FASnI ₃ lead-free PSCs. The influence of the defect interfaces is studied in order to find the optimum value for the maximum possible PCE. While the PCE has not been enhanced considerably for the lead-based, it is boosted from 1.76% to 5.35% for lead-free PSCs. Also, bulk traps were found to have minor role in comparison with interface traps for the lead-free cell while they have a significant impact for the lead-based cell. The results presented in this work would shed some light on designing interface defects of various types of practical PSC structures and demonstrates the crucial impact of the interface defects on lead-free vs lead-based PSCs. All simulation studies are performed by using SCAPS-1D simulator.

In this work, we report on the effect of substituting the active intrinsic i-layer on a conventional pin structure of lead-free perovskite solar cell (PSC) by a homo p-n junction, keeping the thickness of the active layer constant. It is expected that when the active i-layer is substituted by a p-n homo junction, one can increase the collection efficiency of the photo-generated electrons and holes due to the built-in electric field of the homo junction. The impact of the technological and physical device parameters on the performance parameters of the solar cell have been worked out. It was found that p-side thickness must be wider than the n-side, while its acceptor concentration should be slightly lower than the donor concentration of the n-side to achieve maximum efficiency. In addition, different absorber types, namely, i-absorber, n-absorber and p-absorber, are compared to the proposed pn-absorber, showing a performance-boosting effect when using the latter. Moreover, the proposed structure is made without a hole transport layer (HTL) to avoid the organic issues of the HTL materials. The back metal work function, bulk trap density and ETL material are optimized for best performance of the HTL-free structure, giving J_sc = 26.48, V_oc = 0.948 V, FF = 77.20 and PCE = 19.37% for AM1.5 solar spectra. Such results highlight the prospective of the proposed structure and emphasize the importance of using HTL-free solar cells without deteriorating the efficiency. The solar cell is investigated by using SCAPS simulator.

One of the most important challenges in the design of the piezoelectric energy harvester is its narrow bandwidth. Most of the input vibration sources are exposed to frequency variation during their operation. The piezoelectric energy harvester’s narrow bandwidth makes it difficult for the harvester to track the variations of the input vibration source frequency. Thus, the harvester’s output power and overall performance is expected to decline from the designed value. This current study aims to solve the problem of the piezoelectric energy harvester’s narrow bandwidth. The main objective is to achieve bandwidth broadening which is carried out by segmenting the piezoelectric material of the energy harvester into n segments; where n could be more than one. Three arrays with two, four, and six beams are shaped with two piezoelectric segments. The effect of changing the length of the piezoelectric material segment on the resonant frequency, output power, and bandwidth, as well as the frequency response is investigated. The proposed piezoelectric energy harvesters were implemented utilizing a finite element method (FEM) simulation in a MATLAB environment. The results show that increasing the number of array beams increases the output power and bandwidth. For the three-beam arrays, at n equals 2, 6 mW output power and a 9 Hz bandwidth were obtained. Moreover, the bandwidth of such arrays covered around 5% deviation from its resonant frequency. All structures were designed to operate as a steel wheel safety sensor which could be used in train tracks.

With the aim of achieving high efficiency, cost-effectiveness, and reliability of solar cells, several technologies have been studied. Recently, emerging materials have appeared to replace Si-based cells, seeking economic fabrication of solar cells. Thin-film solar cells (TFSCs) are considered strong candidates for this mission, specifically perovskite-based solar cells, reporting competitive power convergence efficiencies reaching up to 25.7%. Substantial efforts have been invested in experimental and research work to surpass the Si-based cells performance. Simulation analysis is a major tool in achieving this target by detecting design problems and providing possible solutions. Usually, a TFSC adopts p-i-n heterojunction architecture by employing carrier transport materials along with the absorber material in order to extract the photogenerated electrons and holes by realizing a built-in electric field. Eventually, this dependency of conventional heterojunction TFSCs on carrier transport layers results in cost-ineffective cells and increases the possibility of device instability and interface problems. Thus, the design of p-n homojunction TFSCs is highly desirable as an essential direction of structural innovation to realize efficient solar cell operation. In this review, a summary of the fundamentals of TFSC materials, recent design and technology progress, and methodologies for improving the device performance using experimental research studies will be discussed. Further, simulation analysis will be provided by demonstrating the latest research work outcomes, highlighting the major achievements and the most common challenges facing thin film homojunction solar cell structures and the methods to improve them.

Organic and perovskite semiconductor materials are considered an interesting combination thanks to their similar processing technologies and band gap tunability. Here, we present the design and analysis of perovskite/organic tandem solar cells (TSCs) by using a full optoelectronic simulator (SETFOS). A wide band gap lead-free ASnI₂Br perovskite top subcell is utilized in conjunction with a narrow band gap DPPEZnP-TBO:PC61BM heterojunction organic bottom subcell to form the tandem configuration. The top and bottom cells were designed according to previous experimental work keeping the same materials and physical parameters. The calibration of the two cells regarding simulation and experimental data shows very good agreement, implying the validation of the simulation process. Accordingly, the two cells are combined to develop a 2T tandem cell. Further, upon optimizing the thickness of the front and rear subcells, a current matching condition is satisfied for which the proposed perovskite/organic TSC achieves an efficiency of 13.32%, J_sc of 13.74 mA/cm², and V_oc of 1.486 V. On the other hand, when optimizing the tandem by utilizing full optoelectronic simulation, the tandem shows a higher efficiency of about 14%, although it achieves a decreased J_sc of 12.27 mA/cm². The study shows that the efficiency can be further improved when concurrently optimizing the various tandem layers by global optimization routines. Furthermore, the impact of defects is demonstrated to highlight other possible routes to improve efficiency. The current simulation study can provide a physical understanding and potential directions for further efficiency improvement for lead-free perovskite/organic TSC.

In this work, an optimization of the InGaP/GaAs dual-junction (DJ) solar cell performance is presented. Firstly, a design for the DJ solar cell based on the GaAs tunnel diode is provided. Secondly, the used device simulator is calibrated with recent experimental results of an InGaP/GaAs DJ solar cell. After that, the optimization of the DJ solar cell performance is carried out for two different materials of the top window layer, AlGaAs and AlGaInP. For AlGaAs, the optimization is carried out for the following: aluminum (Al) mole fraction, top window thickness, top base thickness, and bottom BSF doping and thickness. The electrical performance parameters of the optimized cell are extracted: , , , and the conversion efficiency () equals 36.71%. By using AlGaInP as a top cell window, the electrical performance parameters for the optimized cell are , , , and . So, AlGaInP is found to be the optimum material for the InGaP/GaAs DJ cell top window layer as it gives 4% higher conversion efficiency under 1 sun of the standard AM1.5G solar spectrum at 300 K in comparison with recent literature results. All optimization steps and simulation results are carried out using the SLVACO TCAD tool.