We report room temperature broad range (ultraviolet to short-wavelength infrared) photodetectors made from few-layer α-In₂Se₃ nanosheets.

Gold nanoparticle multilayers printed on silicon substrates layer by layer were etched by a gold etchant to form highly effective and uniform substrates for surface-enhanced Raman scattering (SERS). The performance of the SERS substrates was systematically studied by adjusting the number of nanoparticle layers and the etching time. The optimized enhancement factor (EF) and the detection limit of the substrates were determined to be 8.6 × 10⁶ and 1 × 10⁻¹² M, respectively. The high EF and low detection limit were attributed to the high density of “hot-spots” and the facile accession of probe molecules to these spots. Moreover, the SERS substrates exhibited a nice uniformity with a small spot-to-spot variation and a good sample-to-sample reproducibility as well. The experimental results were supported by finite-difference time domain (FDTD) simulations. Our study suggests that low-cost, large-scale, and uniform SERS substrates with a high EF and low detection limit can be achieved by using bottom-up chemical methods.

Heterojunctions formed by two-dimensional (2D) layered semiconducting materials have been studied extensively in the past few years. These van der Waals (vdW) structures have shown great potential for future electronic and optoelectronic devices. However, the optoelectronic performance of these devices is limited by the indirect band gap of multilayer materials and low light absorption of single layer materials. Here, we fabricate photodetectors based on heterojunctions composed of n-type multilayer α -indium selenide (In ₂ Se ₃ ) and p-type tungsten diselenide (WSe ₂ ) for the first time. The direct band gap of multilayer α -In ₂ Se ₃ and type-II band alignment of the WSe ₂ /In ₂ Se ₃ heterojunction enable high optoelectronic performance of the devices at room temperature in the air. Without light illumination, the dark current is effectively suppressed to 10 ⁻¹³ A under −1 V bias and a high rectification ratio of 7.37 × 10 ³ is observed. Upon laser illumination with a wavelength of 650 nm, the typical heterojunction device exhibits a photocurrent on/off ratio exceeding 1.24 × 10 ⁵ , a maximum photo responsivity of 26 mA W ⁻¹ and a short photoresponse time of 2.22 ms. Moreover, the heterojunction photodetectors show obvious light response in the wavelength range from 650 nm to 900 nm. The present 2D vdW heterojunctions composed of direct band gap multilayer materials show great potential for future optoelectronic devices.

Semiconducting metal oxide-based nanowires (SMO-NWs) for gas sensors have been extensively studied for their extraordinary surface-to-volume ratio, high chemical and thermal stabilities, high sensitivity, and unique electronic, photonic and mechanical properties. In addition to improving the sensor response, vast developments have recently focused on the fundamental sensing mechanism, low power consumption, as well as novel applications. Herein, this review provides a state-of-art overview of electrically transduced gas sensors based on SMO-NWs. We first discuss the advanced synthesis and assembly techniques for high-quality SMO-NWs, the detailed sensor architectures, as well as the important gas-sensing performance. Relationships between the NWs structure and gas sensing performance are established by understanding general sensitization models related to size and shape, crystal defect, doped and loaded additive, and contact parameters. Moreover, major strategies for low-power gas sensors are proposed, including integrating NWs into microhotplates, self-heating operation, and designing room-temperature gas sensors. Emerging application areas of SMO-NWs-based gas sensors in disease diagnosis, environmental engineering, safety and security, flexible and wearable technology have also been studied. In the end, some insights into new challenges and future prospects for commercialization are highlighted.

We studied the electronic transport properties of metal nanoparticle arrays, particularly focused on the Coulomb charging energy. By comparison, we confirmed that it is more reasonable to estimate the Coulomb charging energy using the activation energy from the temperature-dependent zero-voltage conductance. Based on this, we systematically and comprehensively investigated the parameters that could be used to tune the Coulomb charging energy in nanoparticle arrays. We found that four parameters, including the particle core size, the inter-particle distance, the nearest neighboring number, and the dielectric constant of ligand molecules, could significantly tune the Coulomb charging energy.