Mechanically flexible optoelectronic devices and systems can enable a much broader range of applications than what their rigid counterparts can do, especially for novel bio-integrated optoelectronic systems, flexible consumer electronics and wearable sensors. Inorganic semiconductor could be a good candidate for the flexible PD when it can keep its high performance under the bending condition. Here, we demonstrate a III–V material-based flexible photodetector operating wavelength from 640 to 1700 nm with the high detectivity of 5.18 × 10¹¹ cm‧Hz^1/2/W and fast response speed @1550 nm by using a simply top-to-down fabrication process. The optoelectrical performances are stable as the PDs are exposed to bending cycles with a radius of 15 mm up to 1000 times. Furthermore, the mechanical failure mode of the PD is also investigated, which suggests that the cracking and delamination failure mode are dominant in bending up and bending down direction, respectively. Such a flexible III–V material-based PD and design with stable and high performance could be a promising strategy for the application of the flexible broad spectrum detection.

Semiconducting metal oxide-based nanowires (SMO-NWs) for gas sensors have been extensively studied for their extraordinary surface-to-volume ratio, high chemical and thermal stabilities, high sensitivity, and unique electronic, photonic and mechanical properties. In addition to improving the sensor response, vast developments have recently focused on the fundamental sensing mechanism, low power consumption, as well as novel applications. Herein, this review provides a state-of-art overview of electrically transduced gas sensors based on SMO-NWs. We first discuss the advanced synthesis and assembly techniques for high-quality SMO-NWs, the detailed sensor architectures, as well as the important gas-sensing performance. Relationships between the NWs structure and gas sensing performance are established by understanding general sensitization models related to size and shape, crystal defect, doped and loaded additive, and contact parameters. Moreover, major strategies for low-power gas sensors are proposed, including integrating NWs into microhotplates, self-heating operation, and designing room-temperature gas sensors. Emerging application areas of SMO-NWs-based gas sensors in disease diagnosis, environmental engineering, safety and security, flexible and wearable technology have also been studied. In the end, some insights into new challenges and future prospects for commercialization are highlighted.

Metalenses, boasting outstanding focusing efficiency and high-resolution imaging capabilities, have generated widespread usage in fields such as integrated optics, achromatic imaging, and optical holography. In this study, we have developed a broadband achromatic metalens within the detection range from 3 to 5 µm, and it has a numerical aperture (NA) of 0.71 with a remarkable maximum focusing efficiency of 63.8% at the focal plane within the specified bandwidth. We have further delved into the dispersion control mechanism that combines the geometric and transmission phases and optimized the constructed phase response simulation database using the particle swarm optimization (PSO) algorithm, ensuring a precise phase matching between the actual wavefront and the ideal focusing wavefront. This metalens with its ability to expand the array size has the potential to create a compact infrared imager, which holds significant importance in achieving efficient detection and integration within infrared detectors.

Polarization detection in the short-wave infrared (SWIR) region presents broad applications in target-background contrast enhancement, underwater imaging, material classification, etc. A mesa structure can prevent electrical cross talk due to its intrinsic advantages, making it potentially suited to meet the need for manufacturing smaller-sized devices to save cost and shrink volume. In this Letter, mesa-structured InGaAs PIN detectors with a spectral response ranging from 900 nm to 1700 nm and a detectivity of 6.28 × 10¹¹cm·Hz^1/2/W at 1550 nm and –0.1 V bias (room temperature) have been demonstrated. Furthermore, the devices with subwavelength gratings in four orientations show obvious polarization performance. Their extinction ratios (ERs) can reach 18:1 at 1550 nm and their transmittances are over 90%. Such a polarized device with a mesa structure could realize miniaturized SWIR polarization detection.

Plasmonic photodetection based on the hot-electron generation in nanostructures is a promising strategy for sub-band detection due to the high conversion efficiencies; however, it is plagued with the high dark current. In this paper, we have demonstrated the plasmonic photodetection with dark current suppression to create a Si-based broadband photodetector with enhanced performance in the short-wavelength infrared (SWIR) region. By hybridizing a 3 nm Au layer with the spherical Au nanoparticles (NPs) formed by rapid thermal annealing (RTA) on Si substrate, a well-behaved ITO/Au/Au NPs/n-Si Schottky photodetector with suppressed dark current and enhanced absorption in the SWIR region is obtained. This optimized detector shows a broad detection beyond 1200 nm and a high responsivity of 22.82 mA/W at 1310 nm at −1 V, as well as a low dark current density on the order of 10⁻⁵ A/cm². Such a Si-based plasmon-enhanced detector with desirable performance in dark current will be a promising strategy for realization of the high SNR detector while keeping fabrication costs low.