Aluminum nitride (AlN) has gained wide interest owing to its high values of elastic modulus, band gap, dielectric strength, resistivity, thermal conductivity and acoustic velocities, especially because it retains most of its properties and versatility in the thin-film form. This review focuses on applications where the CMOS integration of AlN MEMS has been effectively demonstrated. First, the fundamental concepts of piezoelectricity on polycrystalline $c$ -axis oriented thin-films are introduced and AlN is compared to other common piezoelectric materials, namely LiNbO ₃ , LiTaO ₃ , quartz, lead zirconate titanate (PZT), ZnO and GaN by thoroughly discussing the material properties, processing and technological implications. After presenting the possible MEMS-CMOS integration strategies, recent demonstrations of AlN-based devices are reviewed, namely energy harvesters, film bulk acoustic resonators (FBAR), contour mode resonators (CMR), gas sensors, imagers, microphones, transducers for chip-scale communication and calorimetric sensors. Finally, other recent applications/integration opportunities are outlined for AlN-based micro-mirrors, flexible sensors and transducers for liquid media and harsh environments. [2022-0006]

Multiferroic materials belong to the sub-group of ferroics possessing two or more ferroic orders in the same phase. Aizu first coined the term multiferroics in 1969. Of late, several multiferroic materials’ unique and robust characteristics have shown great potential for various applications. Notably, the coexisting magnetic and electrical ordering results in the Magnetoelectric effect (ME), wherein the electrical polarization can be manipulated by magnetic fields and magnetization by electric fields. Currently, more significant interests lie in significantly enhancing the ME coupling facilitating the realization of Spintronic devices, which makes use of the transport phenomenon of spin-polarized electrons. On the other hand, the magnetoelectric coupling is also pivotal in magnetic memory devices wherein the application of small electric voltage manipulates the magnetic properties of the device. This review gives a brief overview of magnetoelectric coupling in Bismuth ferrite and approaches to achieve higher magnetoelectric coupling and device applications.