We report a stability scheme of resistive switching devices based on ZnO films deposited by radio frequency (RF) sputtering process at different oxygen pressure ratios. I-V measurements and statistical results indicate that the operating stability of ZnO resistive random access memory (ReRAM) devices is highly dependent on oxygen conditions. Data indicates that the ZnO film ReRAM device fabricated at 10% O₂ pressure ratio exhibits the best performance. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) of ZnO at different O₂ pressure ratios were investigated to reflect influence of structure to the stable switching behaviors. In addition, PL and XPS results were measured to investigate the different charge states triggered in ZnO by oxygen vacancies, which affect the stability of the switching behavior.

In this study, aligned zinc oxide (ZnO) nanorods (NRs) with various lengths (1.5–5 µm) were deposited on ZnO:Al (AZO)-coated glass substrates by using a solution phase deposition method; these NRs were prepared for application as working electrodes to increase the photovoltaic conversion efficiency of solar cells. The results were observed in detail by using X-ray diffraction, field-emission scanning electron microscopy, UV-visible spectrophotometry, electrochemical impedance spectroscopy, incident photo-to-current conversion efficiency, and solar simulation. The results indicated that when the lengths of the ZnO NRs increased, the adsorption of D-719 dyes through the ZnO NRs increased along with enhancing the short-circuit photocurrent and open-circuit voltage of the cell. An optimal power conversion efficiency of 0.64% was obtained in a dye-sensitized solar cell (DSSC) containing the ZnO NR with a length of 5 µm. The objective of this study was to facilitate the development of a ZnO-based DSSC.

Because of the Sun’s movement across the sky, broadband and omnidirectional light harvesting is a major development in photovoltaic technology. This study reports the fabrication and characterization of flexible-textured polydimethylsiloxane (PDMS) film on Cu(In,Ga)Se₂ (CIGS) solar cells, which is one of the simplest and cheapest peel-off processes for fabricating a three-dimensional structure. A cell containing a textured PDMS film enhanced the short-circuit current density from 22.12 to 23.93 mA/cm² in a simulated one-sun scenario. The omnidirectional antireflection of CIGS solar cells containing various PDMS films is also investigated. This study uses an angle-resolved reflectance spectroscope to investigate the omnidirectional and broadband optical properties of the proposed PDMS film. This improvement in light harvesting is attributable to the scattering of the PDMS film and the gradual refractive index profile between the PDMS microstructures and air. The flexible-textured PDMS film is suitable for creating an antireflective coating for a diverse range of photovoltaic devices.

In this work, CuIn_{1 -x}Ga_xSe₂(CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, Cu_{2 -x}Se, and air voids ubiquitously observed in ns-PLD-derived CIGS thin films. Moreover, the prominent antireflection and excellent crystalline structures were obtained in the fs-PLD-derived CIGS thin films. The absorption spectra suggest the divergence in energy levels of radiative defects brought by the inhomogeneous distribution of elements in the fs-PLD CIGS, which has also been supported by comparing photoluminescence (PL) spectra of ns- and fs-PLD CIGS thin films at 15 K. Finally, the superior carrier transport properties in fs-PLD CIGS were confirmed by fs pump-probe spectroscopy and four-probe measurements. The present results indicate a promising way for preparing high-quality CIGS thin films via fs-PLD.

This study investigated the influence of ZnO nanostructures on dye adsorption to increase the photovoltaic conversion efficiency of solar cells. ZnO nanostructures were grown in both tree-like and nanorod (NR) arrays on an AZO/FTO film structure by using a hydrothermal method. The results were observed in detail using X-ray diffraction, field-emission scanning electron microscopy (FE-SEM), UV-visible spectrophotometry, electrochemical impedance spectroscopy, and solar simulation. The selective growth of tree-like ZnO was found to exhibit higher dye adsorption loading and conversion efficiency than ZnO NRs. The multiple ‘branches’ of ‘tree-like nanostructures’ increases the surface area for higher light harvesting and dye loading while reducing charge recombination. These improvements result in a 15% enhancement in power conversion. The objective of this study is to facilitate the development of a ZnO-based dye-sensitized solar cell.

An effective approach is demonstrated for enhancing photoelectric conversion of Cu(In,Ga)Se₂ (CIGS) solar cells with three-dimensional ZnO nanotree arrays. Under a simulated one-sun condition, cells with ZnO nanotree arrays enhance the short-circuit current density by 10.62%. The omnidirectional anti-reflection of CIGS solar cells with various ZnO nanostructures is also investigated. The solar-spectrum weighted reflectance is approximately less than 5% for incident angles of up to 60° and for the wavelengths primarily from 400 nm to 1000 nm. This enhancement in light harvesting is attributable to the gradual refractive index profile between the ZnO nanostructures and air.