An evaporation-processed Cu ₂ ZnSnSe ₄ thin film solar cell with a conversion efficiency of 7.18% was facilely fabricated in an environmentally benign selenium atmosphere.

In this paper, GaN-based LEDs with a nanoscale patterned sapphire substrate (NPSS) and a ${\text{SiO}}_2$ photonic quasicrystal (PQC) structure on an n-GaN layer using nanoimprint lithography are fabricated and investigated. The light output power of LED with a NPSS and a ${\text{SiO}}_2$ PQC structure on an n-GaN layer was 48% greater than that of conventional LED. Strong enhancement in output power is attributed to better epitaxial quality and higher reflectance resulted from NPSS and PQC structures. Transmission electron microscopy images reveal that threading dislocations are blocked or bended in the vicinities of NPSS layer. These results provide promising potential to increase output power for commercial light emitting devices.

In this study, aligned zinc oxide (ZnO) nanorods (NRs) with various lengths (1.5–5 µm) were deposited on ZnO:Al (AZO)-coated glass substrates by using a solution phase deposition method; these NRs were prepared for application as working electrodes to increase the photovoltaic conversion efficiency of solar cells. The results were observed in detail by using X-ray diffraction, field-emission scanning electron microscopy, UV-visible spectrophotometry, electrochemical impedance spectroscopy, incident photo-to-current conversion efficiency, and solar simulation. The results indicated that when the lengths of the ZnO NRs increased, the adsorption of D-719 dyes through the ZnO NRs increased along with enhancing the short-circuit photocurrent and open-circuit voltage of the cell. An optimal power conversion efficiency of 0.64% was obtained in a dye-sensitized solar cell (DSSC) containing the ZnO NR with a length of 5 µm. The objective of this study was to facilitate the development of a ZnO-based DSSC.

Because of the Sun’s movement across the sky, broadband and omnidirectional light harvesting is a major development in photovoltaic technology. This study reports the fabrication and characterization of flexible-textured polydimethylsiloxane (PDMS) film on Cu(In,Ga)Se₂ (CIGS) solar cells, which is one of the simplest and cheapest peel-off processes for fabricating a three-dimensional structure. A cell containing a textured PDMS film enhanced the short-circuit current density from 22.12 to 23.93 mA/cm² in a simulated one-sun scenario. The omnidirectional antireflection of CIGS solar cells containing various PDMS films is also investigated. This study uses an angle-resolved reflectance spectroscope to investigate the omnidirectional and broadband optical properties of the proposed PDMS film. This improvement in light harvesting is attributable to the scattering of the PDMS film and the gradual refractive index profile between the PDMS microstructures and air. The flexible-textured PDMS film is suitable for creating an antireflective coating for a diverse range of photovoltaic devices.

Vertically aligned ZnO nanowire (NW) arrays have been synthesized on silicon substrates by chemical vapor deposition. The growth of ZnO NWs may be dominated by vapor-solid nucleation mechanism. Morphological, structural, optical, and field emission characteristics can be modified by varying the growth time. For growth time that reaches 120 min, the length and diameter of ZnO NWs are 1.5 μm and 350 nm, respectively, and they also show preferential growth orientation along the c-axis. Room-temperature photoluminescence spectra exhibit a sharp UV emission and broad green emission, and the enhanced UV-to-green emission ratio with increasing growth time might originate from the reduced concentration of surface defects. Furthermore, strong alignment and uniform distribution of ZnO NWs can also effectively enhance the antireflection to reach the average reflectance of 5.7% in the visible region. The field emission measurement indicated that the growth time plays an important role in density- and morphology-controlled ZnO NWs, and thus, ZnO NWs are expected to be used in versatile optoelectronic devices.