Fillers are essential in the encapsulation molding compound. For three fillers of crystal, spherical, and fused silica, the effects of their size, type, and shape on the viscosity, flow spiral length, thermal conductivity, and coefficient of thermal expansion (CTE) of the compound were explored in this study. The results show that fillers with a larger particle size have a smaller viscosity and flow better; spherical fillers are better than the polygonal ones in this respect. In contrast, both thermal conductivity and CTE increase as the filler particle size increases; the values of these two properties of crystal silica are about twice those of fused silica; the thermal conductivity of polygonal silica is larger than that of spherical silica. On the other hand, the dependence of CTE on the filler shape is insignificant, but is significant to the filler type. The degree of curing of the compound with polygonal silica is also higher than that with either spherical or crystal silica. Namely, curing is affected by both filler type and shape, and can be tuned accordingly to suit specific needs.

In this paper, we propose a dual-fiberoptic Fabry–Perot interferometer (FFPI) sensing system integrated with a low-cost and low-coherence light-emitting diode (LED) as a light source to detect dynamic vibration caused by acoustic waves with a cut-off frequency of 200 Hz. When the acoustic signals are applied, the sensing FFPI on a Styrofoam sheet provides the function of partially transforming the longitudinal energy as the transverse energy generates a phase shift in the sensing FFPI cavity. The light reflected from the sensor is demodulated by the reference FFPI to extract the measurand. The low-power (sub-nW) optical signals are transferred into electrical signals, processed by a designed optical receiver, and recorded for data analysis.

The decoupled-plasma nitridation treatment process is an effective recipe for repairing the trap issues when depositing high-k gate dielectric. Because of this effect, electrical performance is not only increased with the relative dielectric constant, but there is also a reduction in gate leakage. In the past, the effect of nitridation treatment on channel-length was revealed, but a channel-width effect with that treatment was not found. Sensing the different nano-node channel-width n-channel MOSFETs, the electrical characteristics of these test devices with nitridation treatments were studied and the relationship among them was analyzed. Based on measurement of the V_T, SS, G_m, I_ON, and I_OFF values of the tested devices, the electrical performance of them related to process treatment is improved, including the roll-off effect of channel-width devices. On the whole, the lower thermal budget in nitridation treatment shows better electrical performance for the tested channel-width devices.

A novel channel mobility model with two-dimensional (2D) aspect is presented covering the effects of source/drain voltage (V_DS) and gate voltage (V_GS), and incorporating the drift and diffusion current on the surface channel at the nano-node level, at the 28-nm node. The effect of the diffusion current is satisfactory to describe the behavior of the drive current in nano-node MOSFETs under the operations of two-dimensional electrical fields. This breakthrough in the model’s establishment opens up the integrity of long-and-short channel devices. By introducing the variables V_DS and V_GS, the mixed drift and diffusion current model effectively and meaningfully demonstrates the drive current of MOSFETs under the operation of horizontal, vertical, or 2D electrical fields. When comparing the simulated and experimental consequences, the electrical performance is impressive. The error between the simulation and experiment is less than 0.3%, better than the empirical adjustment required to issue a set of drive current models.

With the rapid progress in data mining, deep learning, and artificial intelligence, the demand for datacenters of various sizes increases globally. Datacenters typically require an environment with properly controlled temperature and humidity conditions for their proper operations. These needed environmental conditions are always provided by an air conditioning system. In humid and hot regions, both energy consumption and the splash of water condensate in using the fin-and-tube heat exchangers are of concern because reliability issues can occur. In this study, the effects of fin surface hydrophilic/hydrophobic coatings on the performance of the fin-and-tube heat exchangers, including the heat transfer rate, pressure drop, and water-condensate splash, were investigated experimentally. By varying the cooling air speeds and fin pitches, the results show that hydrophilic surface coating is an effective method in reducing both the pressure drop (thus saving energy) and the condensate splash, while not affecting the heat transfer rates significantly. The water splash reduction is achieved by both the increased air speed for splashing and a smaller amount of splashing. Water splash can even be completely eliminated if the airspeed was below about 3 m/s. In contrast, hydrophobic surface coating will increase both pressure drop and water splash; thus, should be applied with caution.

The p-Si/n-MgZnO:Er/Ga₂O₃/ZnO:In diodes with different Ga₂O₃ thicknesses were fabricated through spray pyrolysis deposition at 450 °C with aqueous solutions containing magnesium nitrate, zinc acetate, erbium acetate, gallium nitrate, and indium nitrate precursors. The effects of Ga₂O₃ layer thickness on the diode properties were investigated. For the deposited films, a combined tiny hexagonal slices and small blocks surface morphology was characterized by scanning electron microscopy for all samples. Diodes were formed after In and Ag deposition on the back side and top side, respectively. The current-voltage characteristics and luminescence spectra are studied. With the increasing of Ga₂O₃ thickness, the diode forward bias resistance increases while the reverse biased dark current shows the decrease-increase characters. The Er ion corresponded green light emission was characterized for the diode under reverse biased breakdown condition. The increased luminescent intensity with low turn-on current behaviors was characterized by the diode with a Ga₂O₃ thickness of 4.9 nm. With the diode electrical and luminescence analysis, the effect of the Ga₂O₃ barrier layer on the diode was discussed. The Ga₂O₃ barrier layer improves performance for rare earth-related light-emitting devices.