Among thin-film photovoltaic technology, cadmium telluride (CdTe) has achieved a truly impressive development that can commercially compete with silicon, which is still the king of the market. Solar cells made on a laboratory scale have reached efficiencies close to 22%, while modules made with fully automated in-line machines show efficiencies above 18%. This success represents the result of over 40 years of research, which led to effective and consolidated production processes. Based on a large literature survey on photovoltaics and on the results of research developed in our laboratories, we present the fabrication processes of both CdTe polycrystalline thin-film solar cells and photovoltaic modules. The most common substrates, the constituent layers, their interaction, the interfaces and the different “tricks” necessary to obtain highly efficient devices will be analyzed. A realistic industrial production process will be analytically described. Moreover, environmental aspects, end-of-life recycling and the life cycle assessment of CdTe-based modules will be deepened and discussed.

There has been a recent surge in interest toward thin film-based solar cells, specifically new absorber materials composed by Earth-abundant and non-toxic elements. Among these materials, antimony selenide (Sb₂Se₃) is a good candidate due to its peculiar properties, such as an appropriate bandgap that promises a theoretical maximum power conversion efficiency of 33% and an absorption coefficient of around 10⁵ cm⁻¹, enabling its use as a thin film absorber layer. However, charge carrier transport has been revealed to be problematic due to its cumbersome structure and the lack of a doping strategy. In this work, we aim to provide a clear picture of the state-of-the-art regarding research on Sb₂Se₃-based solar cells and its prospects, from the successful achievements to the challenges that are still to be overcome. We also report on the key parameters of antimony selenide with a close focus on the different characteristics associated with films grown from different techniques.

Unintentionally doped (001)‐oriented orthorhombic κ‐Ga₂O₃ epitaxial films on c‐plane sapphire substrates are characterized by the presence of ≈ 10 nm wide columnar rotational domains that can severely inhibit in‐plane electronic conduction. Comparing the in‐ and out‐of‐plane resistance on well‐defined sample geometries, it is experimentally proved that the in‐plane resistivity is at least ten times higher than the out‐of‐plane one. The introduction of silane during metal‐organic vapor phase epitaxial growth not only allows for n‐type Si extrinsic doping, but also results in the increase of more than one order of magnitude in the domain size (up to ≈ 300 nm) and mobility (highest µ ≈ 10 cm²V⁻¹s⁻¹, with corresponding lowest ρ ≈ 0.2 Ωcm). To qualitatively compare the mean domain dimension in κ‐Ga₂O₃ epitaxial films, non‐destructive experimental procedures are provided based on X‐ray diffraction and Raman spectroscopy. The results of this study pave the way to significantly improved in‐plane conduction in κ‐Ga₂O₃ and its possible breakthrough in new generation electronics. The set of cross‐linked experimental techniques and corresponding interpretation here proposed can apply to a wide range of material systems that suffer/benefit from domain‐related functional properties.