A more accurate MD model for the rapid solidification of the molten pool was established, which to some extent made up for the lack of observation of dynamic nucleation and crystal nucleus growth process in the molten pool in the experiment.

In this paper, based on the embedded atom method (EAM) potential, molecular dynamics simulations of the solidification process of Al–4 at.%Cu alloy is carried out. The Al–Cu alloy melt is placed at different temperatures for isothermal solidification, and each stage of the entire solidification process is tracked, including homogeneous nucleation, nucleus growth, grain coarsening and microstructure evolution. In the nucleation stage, the transition from high temperature to low temperature manifests a change from spontaneous nucleation mode to divergent nucleation mode. The critical nucleation temperature of the Al–Cu alloy is determined to be about 0.42T_m(T_mis the melting point of Al–4 at.%Cu) by calculating the nucleation rate and the crystal nucleus density. In the nucleus growth stage, two ways of growing up are observed, that is, a large crystal nucleus will absorb a smaller heterogeneous crystal nucleus, and two very close crystal nuclei will merge. In the microstructure evolution of the isothermally solidified Al–Cu alloy, it is emerged that the interior of all nanocrystalline grains are long-period stacking structure composed of face centred cubic (FCC) and hexagonal close-packed (HCP). These details provide important information for the production of Al–Cu binary alloy nano-polycrystalline products.

Epitaxial growth can be used to guide the controllable growth of one metal on the surface of another substrate by matching the interface lattice, thus improving the dendrite tendency of metal growth. The atomic arrangement of the Cu (111) crystal plane of the FCC structure is similar to that of the Zn (0002) crystal plane of the HCP structure, which is theoretically expected to promote the heterogeneous epitaxial nucleation growth of metal zinc under low strain. In this paper, the molecular dynamics method is used to simulate the atomic process of zinc film growth on the Cu (111) surface. It is found that the behavior of zinc-adsorbed atoms on the substrate surface conforms to the epitaxial growth mode. The close-packed structure grown along the (0002) direction of the layered clusters is tiled on the Cu (111) surface, forming a highly ordered low-lattice-mismatch interface. When a large area of layered zinc clusters cover the substrate, the growth mode will change from heteroepitaxial growth to homoepitaxial growth of Zn atoms on the zinc film, forming a lamellar distribution composed of FCC and HCP structure grains. Polycrystalline zinc film with a planar structure with a (0002) surface preferred a crystal plane. The increase in incident energy is helpful in improving the quality of zinc films, while the deposition rate, corresponding to the deposition temperature and electrolyte ion concentration, has no significant effect on the surface morphology and crystal structure of single metal films. In summary, the atomic arrangement of the Cu (111) surface has a strong guiding effect on the atomic ordered arrangement in the zinc film crystal, which is suitable for the epitaxial deposition of the substrate to induce the ordered growth of the Zn (0002) crystal plane.

This paper discusses the influence of pH value, temperature and current density on the crystalline and amorphous structure of Ni-W alloy coatings during the electroplating process. The relationship between the corrosion resistance of Ni-W alloy coating and its crystal structure is discussed. In addition, the most common types of ternary systems and composite coatings for electrodeposited Ni-W alloy coatings are introduced. The effects of element types and contents on the hardness, wear resistance, corrosion resistance and thermal stability of Ni-W alloy coatings are analyzed. Finally, the current problems and development directions of Ni-W alloy coatings are proposed.