Asim Ray

Asim Ray


Research Focus & Metrics

Academic Career Length

37Years (1990-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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31 March 2010 in Organic Electronics
Verified
Journal Article
Closed access
NCNandu Bhanudas Chaure
Nandu Bhanudas Chaure
JSJose Luis Sosa-Sanchez
Jose Luis Sosa-Sanchez
ACAndrew N. Cammidge
Andrew N. Cammidge
MCMichael J. Cook
Michael J. Cook
Asim RayAsim Ray
Asim Ray

16 February 2011 in Journal of The Royal Society Interface
Verified
Journal Article
Closed access
PDF file
SPSharmistha Paul
Sharmistha Paul
DPDeepen Paul
Deepen Paul
GFGeorge R. Fern
George R. Fern
Asim RayAsim Ray
Asim Ray
The detection sensitivity of silver nanoparticle (AgNP)-tagged goat immunoglobulin G (gIgG) microarrays was investigated by studying surface plasmon resonance (SPR) images captured in the visible wavelength range with the help of a Kretchmann-configured optical coupling set-up. The functionalization of anti-gIgG molecules on the AgNP surface was studied using transmission electron microscopy, photon correlation measurements and UV–visible absorption spectroscopy. A value of 1.3 × 10 7 M −1 was obtained for the antibody–antigen binding constant by monitoring the binding events at a particular resonance wavelength. The detection limit of this SPR imaging instrument is 6.66 nM of gIgG achieved through signal enhancement by a factor of larger than 4 owing to nanoparticle tagging with the antibody.

1 March 2011 in Science and Technology of Advanced Materials
Verified
Journal Article
Open access
NCNandu B Chaure
Nandu B Chaure
ACAndrew N Cammidge
Andrew N Cammidge
ICIsabelle Chambrier
Isabelle Chambrier
MCMichael J Cook
Michael J Cook
Markys CainMarkys Cain
Markys Cain
Asim RayAsim Ray
Asim Ray
Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc6) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO2) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4×10-2 cm2 V-1 s-1 and 106 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3 V for untreated devices to -2 V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones.

24 November 2016
Verified
Book Chapter
Closed access
PDF file
DMDebdyuti Mukherjee
Debdyuti Mukherjee
RMRevanasiddappa Manjunatha
Revanasiddappa Manjunatha
SSSrinivasan Sampath
Srinivasan Sampath
Asim RayAsim Ray
Asim Ray

19 December 2016 in 2D Materials
Verified
Journal Article
Open access
PDF file
IBIndrani Banerjee
Indrani Banerjee
TFTsegie Faris
Tsegie Faris
ZSZlatka Stoeva
Zlatka Stoeva
PHPaul G Harris
Paul G Harris
JCJ Chen
J Chen
Asim RayAsim Ray
Asim Ray

9 May 2015 in Journal of Materials Science: Materials in Electronics
Verified
Journal Article
Closed access
PDF file
TLTianyi Li
Tianyi Li
TPTrupti Patel
Trupti Patel
IBIndrani Banerjee
Indrani Banerjee
RHRuth Hill-Pearce
Ruth Hill-Pearce
JGJohn Gallop
John Gallop
Asim RayAsim Ray
Asim Ray